Localization and Electron-Electron Interaction Effects in Platinum Silicide Thin Wires

1986 ◽  
Vol 76 ◽  
Author(s):  
S. Ishida ◽  
K. Murase ◽  
Y. Shimamoto ◽  
K. Ishibashi ◽  
K. Gamo ◽  
...  
Keyword(s):  
Ion Beam ◽  
Weak Localization ◽  
Impurity Scattering ◽  
Surface Region ◽  
Electron Interaction ◽  
Physical Parameters ◽  
Superconducting Transition ◽  
Platinum Silicide ◽  
Thin Wires ◽  
Scattering Time

ABSTRACTThe low-temperature magnetoresistance of PtSi thin wires of varying width, prepared with different mask elements (Cu and Ni) in the reactive ion beam etching, has been studied, to determine the width dependence of the physical parameters in the weak localization. A drastic decrease of the magnetic impurity scattering time τs and that of the superconducting transition temperature Tc have been found for the wires prepared by Ni mask with narrowing width, which suggests that the phase coherence of diffusing electrons responsible for the weak localization and the superconductivity are strongly affected by the presence of a small amount of Ni impurities recoil implanted into the surface region of the sidewalls of wires.

Weak localization in platinum silicide thin films and thin wires

1987 ◽  
Vol 3 (2) ◽  
pp. 153-157 ◽  
Author(s):  
S. Ishida ◽  
K. Murase ◽  
Y. Shimamoto ◽  
K. Ishibashi ◽  
K. Gamo ◽  
...  
Keyword(s):  
Thin Films ◽  
Weak Localization ◽  
Platinum Silicide ◽  
Thin Wires

Studies of the scanning ion beam sputter-cleaned MgO crystal surface by scanning reflection electron microscopy

1987 ◽  
Vol 45 ◽  
pp. 144-145
Author(s):  
H.-J. Ou ◽  
J. M. Cowley ◽  
A. A. Higgs
Keyword(s):  
Crystal Surface ◽  
Ion Beam ◽  
Carbon Film ◽  
Surface Region ◽  
Bulk Sample ◽  
Chamber Pressure ◽  
Specimen Preparation ◽  
Detailed Surface ◽  
Gate Control ◽  
Reflection Electron Microscopy

A scanning ion gun system has been installed on the specimen preparation chamber (pressure ∼5xl0-8 torr) of the VG-HB5 STEM microscope. By using the specimen current imaging technique, it is possible to use an ion beam to sputter-clean the preferred surface region on a bulk sample. As shown in figure 1, the X-Y raster-gate control of the scanning unit for the Krato Mini-Beam I is used to minimize the beam raster area down to a 800μm x800μm square region. With beam energy of 2.5KeV, the MgO cleavage surface has been ion sputter-cleaned for less than 1 minute. The carbon film or other contaminant, introduced during the cleavage process in air, is mostly removed from the MgO crystal surfaces.The immediate SREM inspection of this as-cleaned MgO surface, within the adjacent STEM microscope, has revealed the detailed surface structures of atomic steps, which were difficult to observe on the as-cleaved MgO surfaces in the previous studies.

Electron weak localization and electron–electron interaction effects on magneto-conductivity in In–Ga–Zn oxide films

2014 ◽  
Vol 551 ◽  
pp. 195-199 ◽  
Author(s):  
Bunju Shinozaki ◽  
Kazuya Hidaka ◽  
Syouhei Ezaki ◽  
Kazumasa Makise ◽  
Takayuki Asano ◽  
...  
Keyword(s):  
Oxide Films ◽  
Weak Localization ◽  
Interaction Effects ◽  
Electron Interaction

scholarly journals Site Specific Three-dimensional Structural Analysis in Tissues and Cells Using Automated DualBeam Slice &View

2007 ◽  
Vol 15 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Ben Lich
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Surface Region ◽  
Dimensional Structure ◽  
Near Surface ◽  
Imaging Capability ◽  
Fluorescent Markers ◽  
Confocal And Electron Microscopy

DualBeam instruments that combine the imaging capability of scanning electron microscopy (SEM) with the cutting and deposition capability of a focused ion beam (FIB) provide biologists with a powerful tool for investigating three-dimensional structure with nanoscale (1 nm-100 nm) resolution. Ever since Van Leeuwenhoek used the first microscope to describe bacteria more than 300 years ago, microscopy has played a central role in scientists' efforts to understand biological systems. Light microscopy is generally limited to a useful resolution of about a micrometer. More recently the use of confocal and electron microscopy has enabled investigations at higher resolution. Used with fluorescent markers, confocal microscopy can detect and localize molecular scale features, but its imaging resolution is still limited. SEM is capable of nanometer resolution, but is limited to the near surface region of the sample.

Analytical Study of ZnO-based HEMT for Power Switching

2021 ◽  
Author(s):  
Pawan Kumar ◽  
Sumit Chaudhary ◽  
Md Arif Khan ◽  
Sanjay Kumar ◽  
Shaibal Mukherjee
Keyword(s):  
Ion Beam ◽  
Drain Current ◽  
Cost Effective ◽  
High Electron Mobility Transistor ◽  
Switching Frequency ◽  
Physical Parameters ◽  
High Electron ◽  
Ion Beam Sputtering ◽  
Power Switching ◽  
Group Iii

Abstract We investigate the power switching mechanism to evaluate the power loss ( P D ) and efficiency ( η ) in MgZnO/ZnO (MZO)-based power high electron mobility transistor (HEMT), and physical parameters responsible for P D in molecular beam epitaxy (MBE) and dual ion beam sputtering (DIBS) grown MZO HEMT and compare the performance with the group III-nitride HEMTs. This work extensively probes all physical parameters such as two-dimensional electron gas (2DEG) density, mobility, switching frequency, and device dimension to study their impact on power switching in MZO HEMT. Results suggest that the MBE and DIBS grown MZO HEMT with the gate width ( W G ) of ∼ 205 and ∼ 280 mm at drain current coefficient (k) of 11 and 15, respectively, will achieve 99.96 and 99.95% of η and 9.03 and 12.53 W of P D , respectively. Moreover, W G value for DIBS-grown MZO HEMT is observed to further reduce in the range of 112-168 mm by using a Y 2 O 3 spacer layer leading to the maximum η in the range of 99.98-99.97% and the minimum P D in the range of 5-7 W. This work is significant for the development of cost-effective HEMTs for power switching applications.

Separating weak-localization and electron-electron-interaction contributions to the conductivity of carbon nanostructures

2007 ◽  
Vol 105 (1) ◽  
pp. 223-226 ◽  
Author(s):  
E. N. Tkachev ◽  
A. I. Romanenko ◽  
O. B. Anikeeva ◽  
T. I. Buryakov ◽  
V. E. Fedorov ◽  
...  
Keyword(s):  
Carbon Nanostructures ◽  
Weak Localization ◽  
Electron Interaction

Amortization and Recrystallization of 6H-SiC by ion Beam Irradiation

1994 ◽  
Vol 339 ◽  
Author(s):  
V. Heera ◽  
R. Kögler ◽  
W. Skorupa ◽  
J. Stoemenos
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Beam Irradiation ◽  
Surface Layers ◽  
Near Surface ◽  
Transmission Electron ◽  
Amorphous Surface ◽  
Amorphous Sic

ABSTRACTThe evolution of the damage in the near surface region of single crystalline 6H-SiC generated by 200 keV Ge+ ion implantation at room temperature (RT) was investigated by Rutherford backscattering spectroscopy/chanelling (RBS/C). The threshold dose for amorphization was found to be about 3 · 1014 cm-2, Amorphous surface layers produced with Ge+ ion doses above the threshold were partly annealed by 300 keV Si+ ion beam induced epitaxial crystallization (IBIEC) at a relatively low temperature of 480°C For comparison, temperatures of at least 1450°C are necessary to recrystallize amorphous SiC layers without assisting ion irradiation. The structure and quality of both the amorphous and recrystallized layers were characterized by cross-section transmission electron microscopy (XTEM). Density changes of SiC due to amorphization were measured by step height measurements.

Resistive Width of Superconducting Transition in Titanium Nitride Thin Film

2011 ◽  
Vol 6 (2) ◽  
pp. 50-56
Author(s):  
Svetlana V. Postolova ◽  
Alexey Yu. Mironov ◽  
Tatyana I. Baturina
Keyword(s):  
Transition Temperature ◽  
Titanium Nitride ◽  
Electron Interaction ◽  
Nitride Film ◽  
Superconducting Transition ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Superconducting Fluctuations ◽  
Width Of Superconducting Transition ◽  
Titanium Nitride Film

The transition to the superconducting state of the ultrathin (5 nm thick) titanium nitride film was studied. It is found that the nonmonotonic temperature dependence of the resistance, R(T), is a consequence of competition between the contributions to conductivity from quantum corrections stemming from the electron-electron interaction in the diffusion and Cooper channels. It is shown that the appreciable decrease in the resistance at T > Tc (Tc is the superconducting transition temperature) results from the superconducting fluctuations. We present the results of the analysis of low-temperature (T < Tc ) current-voltage characteristics V(I). It is found that they follow the power-law behavior V∝ I α(T) , with α(T) increasing rapidly with the decreasing temperature. The Berezinskii-Kosterlitz-Thouless transition temperature, TBKT, and width of the superconducting transition ∆T = Tc − TБКТ were determined

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