Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission

2014 ◽  
Vol 104 (15) ◽  
pp. 151901 ◽  
Author(s):  
Feng Wu ◽  
Yuji Zhao ◽  
Alexey Romanov ◽  
Steven P. DenBaars ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stacking Faults ◽  
Long Wavelength ◽  
Wavelength Emission ◽  
Interface Roughening ◽  
Ingan Quantum Wells

Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells

2000 ◽  
Vol 26 (5) ◽  
pp. 443-445
Author(s):  
B. V. Volovik ◽  
A. R. Kovsh ◽  
W. Passenberg ◽  
H. Kuenzel ◽  
N. N. Ledentsov ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Long Wavelength ◽  
Wavelength Emission

Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission

2006 ◽  
Vol 88 (19) ◽  
pp. 191115 ◽  
Author(s):  
Fumitaro Ishikawa ◽  
Michael Höricke ◽  
Uwe Jahn ◽  
Achim Trampert ◽  
Klaus H. Ploog
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
High Quality ◽  
Long Wavelength ◽  
Molecular Beam Epitaxial ◽  
Wavelength Emission ◽  
Molecular Beam Epitaxial Growth

scholarly journals Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells

2006 ◽  
Vol 88 (5) ◽  
pp. 051115 ◽  
Author(s):  
J.-Y. Yeh ◽  
L. J. Mawst ◽  
A. A. Khandekar ◽  
T. F. Kuech ◽  
I. Vurgaftman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Long Wavelength ◽  
Wavelength Emission

Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization

2013 ◽  
Vol 102 (9) ◽  
pp. 091905 ◽  
Author(s):  
Yuji Zhao ◽  
Feng Wu ◽  
Chia-Yen Huang ◽  
Yoshinobu Kawaguchi ◽  
Shinichi Tanaka ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Wells ◽  
Long Wavelength ◽  
Void Defects ◽  
Rate Optimization ◽  
Ingan Quantum Wells

scholarly journals Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes

Materials ◽  
2019 ◽  
Vol 12 (16) ◽  
pp. 2583
Author(s):  
Marcin Sarzyński ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Grzegorz Targowski ◽  
Robert Czernecki ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Wells ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Direction Parallel ◽  
Step Flow ◽  
Stripe Width ◽  
Wavelength Emission ◽  
Ingan Quantum Wells ◽  
Made In

InGaN quantum wells were grown using metalorganic chemical vapor phase epitaxy (vertical and horizontal types of reactors) on stripes made on GaN substrate. The stripe width was 5, 10, 20, 50, and 100 µm and their height was 4 and 1 µm. InGaN wells grown on stripes made in the direction perpendicular to the off-cut had a rough morphology and, therefore, this azimuth of stripes was not further explored. InGaN wells grown on the stripes made in the direction parallel to the GaN substrate off-cut had a step-flow-like morphology. For these samples (grown at low temperatures), we found out that the InGaN growth rate was higher for the narrower stripes. The higher growth rate induces a higher indium incorporation and a longer wavelength emission in photoluminescence measurements. This phenomenon is very clear for the 4 µm high stripes and less pronounced for the shallower 1 µm high stripes. The dependence of the emission wavelength on the stripe width paves a way to multicolor emitters.

scholarly journals High internal quantum efficiency of long wavelength InGaN quantum wells

2021 ◽  
Vol 119 (7) ◽  
pp. 071102
Author(s):  
Saulius Marcinkevičius ◽  
Rinat Yapparov ◽  
Yi Chao Chow ◽  
Cheyenne Lynsky ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Long Wavelength ◽  
Ingan Quantum Wells

Influence of solvent polarity on the dual fluorescence of p-N,N-dimethylaminobenzonitrile: An AM1 theoretical study

1990 ◽  
Vol 55 (8) ◽  
pp. 1891-1895 ◽  
Author(s):  
Peter Ertl
Keyword(s):  
Excited State ◽  
Theoretical Study ◽  
Solvent Polarity ◽  
Semiempirical Method ◽  
Dual Fluorescence ◽  
Long Wavelength ◽  
Polar Media ◽  
Wavelength Emission ◽  
Ground State Geometry ◽  
Influence Of Solvent

Twisting of the NMe2 group in p-N,N-dimethylaminobenzonitrile (DMABN) was investigated using AM1 semiempirical method with configuration interaction. Effect of polar media was considered by placing + and - charge centers ("sparkles") at appropriate places opposite the molecule. Optimized ground state geometry of DMABN is slightly twisted with the lowest vertical excited state of 1B character. As the polarity of media increases and/or the - NMe2 group twists, the symmetric 1A excited state having considerable charge separation becomes energetically favorable. Anomalous long-wavelength emission of DMABN comes from this state.

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