scholarly journals Impacts of crystal orientation of GaAs on the interfacial structures and electrical properties of Hf0.6La0.4Ox films

2014 ◽  
Vol 115 (13) ◽  
pp. 134101
Author(s):  
Tingting Jia ◽  
Hideo Kimura ◽  
Hongyang Zhao ◽  
Qiwen Yao ◽  
Zhenxiang Cheng ◽  
...  
1979 ◽  
Vol 23 (89) ◽  
pp. 223-232 ◽  
Author(s):  
A. H. W. Woodruff ◽  
C. S. M. Doake

Abstract Polar ice is now thought to be marginally birefringent at radio echo-sounding frequencies. An experiment on the polarization behaviour of 60 MHz radio echoes from the bed of both ice shelf and land ice in Antarctica showed a marked difference in the returned polarization. It appears that differences in electrical properties or roughness of the reflecting boundary cannot explain our results. We suggest that there is a large change in the birefringence of the ice sheet at the hinge zone, caused by the effect of tidal strain on crystal orientation. This would imply a minimum value of the radio-frequency anisotropy in permittivity for the single crystal of (0.52±0.8)%. Therefore polarization changes could allow floating and grounded ice to be distinguished.


2009 ◽  
Vol 421-422 ◽  
pp. 17-20
Author(s):  
Chao Chen ◽  
Xiang Yong Zhao ◽  
Hong Liu ◽  
Wen Wei Ge ◽  
Hao Su Luo ◽  
...  

(1-x)(Na0.5Bi0.5)TiO3-xBaTiO3 (abbreviated as NBBT100(1-x)/100x or NBBT100x) solid solution single crystals with x=0, 0.06, 0.08, 0.10, 0.20, 1.0 were grown using top-seeded solution growth (TSSG) method. Dielectric, piezoelectric and ferroelectric properties of NBBT crystals were investigated as a function of temperature, frequency, composition and crystal orientation. The temperature (Tm) corresponding to dielectric maximum and the depolarization temperature (Td) decrease with increasing x. The <001> oriented NBBT90/10 single crystal shows excellent piezoelectric performance with piezoelectric constant (d33) value about 275pC/N and exhibits relatively smaller coercive field (Ec) of 2.49 kV/mm and dielectric loss tanδ of 2.9 %, indicating a more adaptive engineered domain structure.


2013 ◽  
Vol 582 ◽  
pp. 157-160 ◽  
Author(s):  
Takumi Oshima ◽  
Masaya Nohara ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.


2005 ◽  
Vol 98 (9) ◽  
pp. 094106 ◽  
Author(s):  
Shintaro Yokoyama ◽  
Yoshihisa Honda ◽  
Hitoshi Morioka ◽  
Shoji Okamoto ◽  
Hiroshi Funakubo ◽  
...  

2010 ◽  
Vol 257 (3) ◽  
pp. 1088-1091 ◽  
Author(s):  
A. Bittner ◽  
A. Ababneh ◽  
H. Seidel ◽  
U. Schmid

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