Position of fermi level on Al0.2Ga0.8N surface and distribution of electric field in Al0.2Ga0.8N/GaN heterostructures without and with AlN layer

2014 ◽  
Vol 115 (13) ◽  
pp. 133504 ◽  
Author(s):  
M. Gladysiewicz ◽  
L. Janicki ◽  
R. Kudrawiec ◽  
J. Misiewicz ◽  
M. Wosko ◽  
...  
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
Distribution Of Electric Field

Calculation of Power Frequency Electric Field under Overhead Lines with Complex Ground

2013 ◽  
Vol 441 ◽  
pp. 212-216
Author(s):  
Zhen Guang Liang ◽  
Yu Ze Jiang ◽  
Di Wen Jiang ◽  
Zong Jie Liu
Keyword(s):  
Electric Field ◽  
Surface Charge ◽  
Simulation Method ◽  
Three Dimension ◽  
Charge Simulation Method ◽  
Overhead Lines ◽  
Straight Line ◽  
Power Frequency ◽  
Frequency Electric Field ◽  
Distribution Of Electric Field

This paper studied influence of three dimension complex ground on electric field under overhead lines. Surface charge method is discussed and planar triangle surface charge elements are used to represent complex ground. Electric field of overhead lines is analyzed by charge simulation method. Finite straight line charges are used to represent conductors. Then electric field of 220kV double circuit overhead lines over a three dimension small hill is calculated and distribution of electric field 1.5m above the ground is analyzed.

scholarly journals Spatial distribution of electric-field enhancement across the gap of terahertz bow-tie antennas

2020 ◽  
Vol 28 (17) ◽  
pp. 24389 ◽  
Author(s):  
Matthias Runge ◽  
Dieter Engel ◽  
Michael Schneider ◽  
Klaus Reimann ◽  
Michael Woerner ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Electric Field ◽  
Field Enhancement ◽  
Electric Field Enhancement ◽  
Bow Tie ◽  
Distribution Of Electric Field

Dependence of Reliability of Ultrathin Mos Gate Oxides on the Fermi Level Positions at Gate and Substrate

1997 ◽  
Vol 473 ◽  
Author(s):  
Tien-Chun Yang ◽  
Navakanta Bhat ◽  
Krishna C. Saraswat
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
Breakdown Strength ◽  
Gate Oxide ◽  
High Energy ◽  
Constant Current ◽  
Oxide Breakdown ◽  
Mos Devices ◽  
High Energy Electrons ◽  
Substrate Doping

ABSTRACTWe demonstrate that the reliability of ultrathin (< 10 nm) gate oxide in MOS devices depends on the Fermi level position at the gate, and not on the position at the substrate for constant current gate injection (Vg-). The oxide breakdown strength (Qbd) is less for p+ poly-Si gate than for n+ poly-Si gate, but, it is independent of the substrate doping type. The degradation of oxides is closely related to the electric field across the gate oxide, which is influenced by the cathode Fermi level. P+ poly-Si gate has higher barrier height for tunneled electrons, therefore, the cathode electric field must be higher to give the same injection current density. A higher electric field gives more high energy electrons at the anode, and therefore the damage is more at the substrate interface. Different substrate types cause no effect on the oxide electric field, and as a result, they do not influence the degradation.

Evidence of electric field-tunable tunneling probability in graphene and metal contact

Nanoscale ◽  
2017 ◽  
Vol 9 (27) ◽  
pp. 9520-9528 ◽  
Author(s):  
Songang Peng ◽  
Zhi Jin ◽  
Dayong Zhang ◽  
Jingyuan Shi ◽  
Yanhui Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
Tunneling Probability ◽  
Metal Contact

The tunneling probability in metal/graphene contact is not constant, but highly dependent on the Fermi level of graphene under the metal.

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