Modelling current-induced magnetization switching in Heusler alloy Co2FeAl-based spin-valve nanopillar

2014 ◽  
Vol 115 (13) ◽  
pp. 133905 ◽  
Author(s):  
H. B. Huang ◽  
X. Q. Ma ◽  
Z. H. Liu ◽  
C. P. Zhao ◽  
L. Q. Chen
Keyword(s):  
Heusler Alloy ◽  
Spin Valve ◽  
Magnetization Switching

scholarly journals Angular Dependence of Spin Transfer Switching in Spin Valve Nanopillar Based Heusler Alloy

2016 ◽  
Vol 2016 ◽  
pp. 1-7
Author(s):  
Pirat Khunkitti ◽  
Anan Kruesubthaworn ◽  
Arkom Kaewrawang ◽  
Tim Mewes ◽  
Claudia K. A. Mewes ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Spin Valve ◽  
Random Access ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Switching Behavior ◽  
Magnetization Switching ◽  
Low Frequencies ◽  
Power Spectral ◽  
High Density Recording

The spin transfer induced magnetization switching in current perpendicular-to-the-plane spin valve nanopillar based Co2FeAl0.5Si0.5Heusler alloy with varying the initial angles of the magnetization of sensing layer,θ0, was investigated via macrospin simulations. The effects of an in-plane magnetic field,Hi, on the switching behavior were also evaluated. The magnetization switching was excited by spin polarized switching current,Is. The time varying magnetization was computed by the Landau-Lifshitz-Gilbert-Slonczewski equation, while the spin transfer induced noise was examined by using the power spectral density analysis. It was found thatθ0should be narrowly initialized since this configuration produces the small noise during the switching. Also, the negativeIsproduced more uniform switching than the positiveIsdue to existence of ferromagnetic exchange coupling. WhenHiwas presented, the noise generated at low frequencies could be suppressed, and then the switching behavior became more uniform. In addition, the results indicated that the noise configuration could be explained by the physical dynamic of magnetization behavior. Hence, the spin transfer induced noise needs to be minimized in order to improve the performance of spin transfer torque random access memory for high density recording.

Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

2013 ◽  
Vol 102 (4) ◽  
pp. 042405 ◽  
Author(s):  
H. B. Huang ◽  
X. Q. Ma ◽  
Z. H. Liu ◽  
C. P. Zhao ◽  
S. Q. Shi ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Spin Valve ◽  
Spin Transfer ◽  
Full Heusler

scholarly journals Spin–orbit torque magnetization switching in a perpendicularly magnetized full Heusler alloy Co2FeSi

AIP Advances ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 115014
Author(s):  
Miao Jiang ◽  
Eisuke Matsushita ◽  
Yota Takamura ◽  
Le Duc Anh ◽  
Shigeki Nakagawa ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Spin Orbit ◽  
Magnetization Switching ◽  
Full Heusler

scholarly journals Increasing the performance of a superconducting spin valve using a Heusler alloy

2018 ◽  
Vol 9 ◽  
pp. 1764-1769 ◽  
Author(s):  
Andrey A Kamashev ◽  
Aidar A Validov ◽  
Joachim Schumann ◽  
Vladislav Kataev ◽  
Bernd Büchner ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Heusler Alloy ◽  
Spin Valve ◽  
Small Degree ◽  
Switching Effect ◽  
Prepared Film ◽  
Exchange Field ◽  
Superconducting Properties ◽  
Valve Effect ◽  
Superconducting Current

We have studied superconducting properties of spin-valve thin-layer heterostructures CoO x /F1/Cu/F2/Cu/Pb in which the ferromagnetic F1 layer was made of Permalloy while for the F2 layer we have taken a specially prepared film of the Heusler alloy Co2Cr1− x Fe x Al with a small degree of spin polarization of the conduction band. The heterostructures demonstrate a significant superconducting spin-valve effect, i.e., a complete switching on and off of the superconducting current flowing through the system by manipulating the mutual orientations of the magnetization of the F1 and F2 layers. The magnitude of the effect is doubled in comparison with the previously studied analogous multilayers with the F2 layer made of the strong ferromagnet Fe. Theoretical analysis shows that a drastic enhancement of the switching effect is due to a smaller exchange field in the heterostructure coming from the Heusler film as compared to Fe. This enables to approach an almost ideal theoretical magnitude of the switching in the Heusler-based multilayer with a F2 layer thickness of ca. 1 nm.

Enhancement of current-perpendicular-to-plane giant magnetoresistance by insertion of amorphous ferromagnetic underlayer in Heusler alloy-based spin-valve structures

2016 ◽  
Vol 10 (1) ◽  
pp. 013006 ◽  
Author(s):  
Young-suk Choi ◽  
Tomoya Nakatani ◽  
John C. Read ◽  
Matthew J. Carey ◽  
Derek A. Stewart ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Current Perpendicular To Plane

scholarly journals Giant magnetoresistance ratio in a current-perpendicular-to-plane spin valve based on an inverse Heusler alloy Ti2NiAl

2019 ◽  
Vol 10 ◽  
pp. 1658-1665
Author(s):  
Yu Feng ◽  
Zhou Cui ◽  
Bo Wu ◽  
Jianwei Li ◽  
Hongkuan Yuan ◽  
...  
Keyword(s):  
Transmission Coefficient ◽  
Heusler Alloy ◽  
Giant Magnetoresistance ◽  
Magnetic Moments ◽  
Heusler Alloys ◽  
Spin Valve ◽  
Total Transmission ◽  
Higher Spin ◽  
Magnetoresistance Ratio ◽  
Current Perpendicular To Plane

A Ti2NiAl inverse Heusler alloy based current-perpendicular-to-plane (CPP) spin valve (SV) with various kinds of atomic terminated interfaces has been designed to explore the potential application of Heusler alloys in spintronics devices. By performing first principles calculations combined with the nonequilibrium Green’s function, it is revealed that spin magnetic moments of interfacial atoms suffer a decrease, and the electronic structure shows that the TiNiB-terminated structure possesses the largest interface spin polarization of ≈55%. Our study on spin-transport properties indicates that the total transmission coefficient at the Fermi level mainly comes from the contribution from the spin up electrons, which are regarded as the majority of the spin electrons. When the two electrodes of the CPP-SV device are in parallel magnetization configuration, the interface containing Ti and Ni atoms possesses a higher spin up transmission coefficient than the interface containing Ti and Al atoms. The device with the TiNiB-terminated interface possesses the largest magnetoresistance ratio of 3.28 × 105, and it has great application potential in spintronics devices.

Erratum: “Large magnetoresistance in current-perpendicular-to-plane pseudo spin valve using a Co2Fe(Ge0.5Ga0.5) Heusler alloy” [Appl. Phys. Lett. 98, 152501 (2011)]

2011 ◽  
Vol 98 (18) ◽  
pp. 189901 ◽  
Author(s):  
Y. K. Takahashi ◽  
A. Srinivasan ◽  
B. Varaprasad ◽  
A. Rajanikanth ◽  
N. Hase ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Spin Valve ◽  
Current Perpendicular To Plane
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