scholarly journals Angular Dependence of Spin Transfer Switching in Spin Valve Nanopillar Based Heusler Alloy

2016 ◽  
Vol 2016 ◽  
pp. 1-7
Author(s):  
Pirat Khunkitti ◽  
Anan Kruesubthaworn ◽  
Arkom Kaewrawang ◽  
Tim Mewes ◽  
Claudia K. A. Mewes ◽  
...  
Keyword(s):  
Heusler Alloy ◽  
Spin Valve ◽  
Random Access ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Switching Behavior ◽  
Magnetization Switching ◽  
Low Frequencies ◽  
Power Spectral ◽  
High Density Recording

The spin transfer induced magnetization switching in current perpendicular-to-the-plane spin valve nanopillar based Co2FeAl0.5Si0.5Heusler alloy with varying the initial angles of the magnetization of sensing layer,θ0, was investigated via macrospin simulations. The effects of an in-plane magnetic field,Hi, on the switching behavior were also evaluated. The magnetization switching was excited by spin polarized switching current,Is. The time varying magnetization was computed by the Landau-Lifshitz-Gilbert-Slonczewski equation, while the spin transfer induced noise was examined by using the power spectral density analysis. It was found thatθ0should be narrowly initialized since this configuration produces the small noise during the switching. Also, the negativeIsproduced more uniform switching than the positiveIsdue to existence of ferromagnetic exchange coupling. WhenHiwas presented, the noise generated at low frequencies could be suppressed, and then the switching behavior became more uniform. In addition, the results indicated that the noise configuration could be explained by the physical dynamic of magnetization behavior. Hence, the spin transfer induced noise needs to be minimized in order to improve the performance of spin transfer torque random access memory for high density recording.

Progress and Prospects of Spin Transfer Torque Random Access Memory

2012 ◽  
Vol 48 (11) ◽  
pp. 3025-3030 ◽  
Author(s):  
E. Chen ◽  
D. Apalkov ◽  
A. Driskill-Smith ◽  
A. Khvalkovskiy ◽  
D. Lottis ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory

Magnetization switching by magnon-mediated spin torque through an antiferromagnetic insulator

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  
Keyword(s):  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Local Magnetization ◽  
Magnetization Switching ◽  
Spintronic Devices ◽  
Magnetic Devices ◽  
Alternative Approach ◽  
Efficient Control ◽  
Electrical Spin

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.

WRITE ERROR RATE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY

SPIN ◽  
2012 ◽  
Vol 02 (03) ◽  
pp. 1240001 ◽  
Author(s):  
ZIHUI WANG ◽  
YUCHEN ZHOU ◽  
JING ZHANG ◽  
YIMING HUAI
Keyword(s):  
Error Rate ◽  
Random Access ◽  
Magnetic Tunnel Junction ◽  
Random Access Memory ◽  
Underlying Mechanism ◽  
Theoretical Description ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Access Memory ◽  
Magnetic Random Access Memory

This paper reviews the recent progress made to realize reliable write operations in spin transfer torque magnetic random access memory. Theoretical description of write error rate (WER) based on macro-spin models are discussed with comparison to experimental data. Recent studies on the phenomena that can lead to abnormal WER behaviors which include back-hopping and low probability bifurcated switching are reviewed with emphasis on underlying mechanism. The studies on the WER in perpendicular magnetic tunnel junction (MTJ) are also reviewed. It is demonstrated that, for both in-plane and perpendicular MTJ, reliable and error-free write operations can be achieved with thorough understanding of the underlying physics and innovative design/process solutions.

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