Monochromatic short pulse laser produced ion beam using a compact passive magnetic device

2014 ◽  
Vol 85 (4) ◽  
pp. 043504 ◽  
Author(s):  
S. N. Chen ◽  
M. Gauthier ◽  
D. P. Higginson ◽  
S. Dorard ◽  
F. Mangia ◽  
...  
2008 ◽  
Vol 112 (4) ◽  
pp. 042044 ◽  
Author(s):  
S Kawata ◽  
M Nakamura ◽  
Q Kong ◽  
Y Nodera ◽  
N Onuma ◽  
...  

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


2013 ◽  
Vol 115 (4) ◽  
pp. 1469-1477 ◽  
Author(s):  
Evgeny Kharanzhevskiy ◽  
Sergey Reshetnikov

1994 ◽  
Author(s):  
Ronnie Shepherd ◽  
Rex Booth ◽  
Dwight Price ◽  
Rosemary Walling ◽  
Richard More ◽  
...  

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