Mono-energetic ion beam acceleration in solitary waves during relativistic transparency using high-contrast circularly polarized short-pulse laser and nanoscale targets

2011 ◽  
Vol 18 (5) ◽  
pp. 053103 ◽  
Author(s):  
L. Yin ◽  
B. J. Albright ◽  
D. Jung ◽  
K. J. Bowers ◽  
R. C. Shah ◽  
...  
2014 ◽  
Vol 85 (4) ◽  
pp. 043504 ◽  
Author(s):  
S. N. Chen ◽  
M. Gauthier ◽  
D. P. Higginson ◽  
S. Dorard ◽  
F. Mangia ◽  
...  

2008 ◽  
Vol 112 (4) ◽  
pp. 042044 ◽  
Author(s):  
S Kawata ◽  
M Nakamura ◽  
Q Kong ◽  
Y Nodera ◽  
N Onuma ◽  
...  

2011 ◽  
Vol 375 (45) ◽  
pp. 4022-4028 ◽  
Author(s):  
Shan Zhang ◽  
Xue-Ren Hong ◽  
Hong-Yu Wang ◽  
Bai-Song Xie

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


2013 ◽  
Vol 115 (4) ◽  
pp. 1469-1477 ◽  
Author(s):  
Evgeny Kharanzhevskiy ◽  
Sergey Reshetnikov

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