Electron-phonon interaction effect on the energy levels and diamagnetic susceptibility of quantum wires: Parallelogram and triangle cross section

2014 ◽  
Vol 115 (12) ◽  
pp. 124314 ◽  
Author(s):  
R. Khordad ◽  
H. Bahramiyan
Keyword(s):  
Cross Section ◽  
Interaction Effect ◽  
Quantum Wires ◽  
Diamagnetic Susceptibility ◽  
Energy Levels ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Electron–phonon interaction influence on optical properties of parallelogram quantum wires

2014 ◽  
Vol 28 (22) ◽  
pp. 1450142 ◽  
Author(s):  
H. Bahramiyan ◽  
R. Khordad ◽  
H. Azari
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Energy Levels ◽  
Moment Matrix ◽  
Absorption Coefficients ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Index Changes

In the present work, we have studied the effect of electron–phonon (e–p) interaction on optical properties of a GaAs quantum wire with parallelogram cross-section. For this goal, we have calculated refractive index changes and absorption coefficients by using compact-density-matrix approach and iterative method. The results show that the refractive index changes and absorption coefficients are obviously increased and the peak positions shift toward higher energies after considering the e–p interaction. We have also studied polaronic effect on electric dipole moment matrix elements and the energy levels for different quantum wire sizes. We have found that the line-width of absorption coefficients and refractive index changes is approximately constant after considering e–p interaction.

Experimental studies of the electron–phonon interaction in InGaAs quantum wires

2002 ◽  
Vol 81 (4) ◽  
pp. 727-729 ◽  
Author(s):  
T. Sugaya ◽  
J. P. Bird ◽  
D. K. Ferry ◽  
A. Sergeev ◽  
V. Mitin ◽  
...  
Keyword(s):  
Quantum Wires ◽  
Experimental Studies ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

ELECTRON–PHONON INTERACTION AND ELECTRONIC STRUCTURE OF SMALL METAL CLUSTERS

1996 ◽  
Vol 03 (01) ◽  
pp. 489-492 ◽  
Author(s):  
JIJUN ZHAO ◽  
XIAOSHUANG CHEN ◽  
FENGQI LIU ◽  
GUANGHOU WANG
Keyword(s):  
Electronic Structures ◽  
Metal Clusters ◽  
Energy Levels ◽  
Iteration Process ◽  
Coupling Constant ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Size Dependent ◽  
Electron Phonon Coupling ◽  
Valence Electrons

The Su–Schrieffer–Heeger (SSH) Hamiltonian has been extended to study the electron–phonon interaction and the electronic structures of the alkali-like metal clusters. The eigen-energy levels of s valence electrons are obtained from a Hückel-like Hamiltonian including the correction of the electron–phonon interaction in the hopping integral, which is proportional to the variable of bond length. The self-consistent equations for electrons and phonons are solved adiabatically through an iteration process. The energy-level structures of an octahedral Cu6 cluster are calculated with variable electron–phonon coupling constant λ to investigate the influence of electron–phonon interaction on the lattice distortion and electronic structures of metal clusters. The size-dependent ionization potential for small Cun clusters are calculated and compared with the experimental results.

Electron-Phonon Interaction in the Transport Properties of Quantum Wires

1995 ◽  
Vol 29 (6) ◽  
pp. 481-487 ◽  
Author(s):  
J Wróbel ◽  
T Brandes ◽  
F Kuchar ◽  
B Kramer ◽  
K Ismail ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Wires ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

THE TEMPERATURE DEPENDENCE OF THE ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

1967 ◽  
Vol 45 (4) ◽  
pp. 1421-1438 ◽  
Author(s):  
C. Y. Cheung ◽  
Robert Barrie
Keyword(s):  
Temperature Dependence ◽  
Energy Levels ◽  
Electronic States ◽  
Shallow Donor ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon ◽  
Phosphorus Doped

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.

ELECTRON–PHONON INTERACTION EFFECTS ON THIRD-HARMONIC GENERATION IN CYLINDRICAL QUANTUM WIRES

2004 ◽  
Vol 18 (01) ◽  
pp. 53-61 ◽  
Author(s):  
YOU-BIN YU ◽  
KANG-XIAN GUO
Keyword(s):  
Iterative Method ◽  
Harmonic Generation ◽  
Quantum Wires ◽  
Third Harmonic Generation ◽  
Matrix Approach ◽  
Phonon Interaction ◽  
Third Harmonic ◽  
Electron Phonon Interaction ◽  
The Third ◽  
Compact Density

The influence of electron–phonon interaction on third-harmonic generation in cylindrical quantum wires are investigated. The third-harmonic generation coefficient is obtained using compact-density-matrix approach and iterative method, and the numerical results are presented for GaAs cylindrical quantum wires. The results show that the third-harmonic generation coefficient is greatly enhanced after taking into consideration the influence of electron–phonon interaction. It is about thirty times larger than that obtained by just considering electron states when electron–phonon resonance is met.

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