Erratum: “Ga2Te3 phase change material for low-power phase change memory application” [Appl. Phys. Lett. 97, 083504 (2010)]

2014 ◽  
Vol 104 (12) ◽  
pp. 129903
Author(s):  
Hao Zhu ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Zhiguo Liu
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Ga2Te3 phase change material for low-power phase change memory application

2010 ◽  
Vol 97 (8) ◽  
pp. 083504 ◽  
Author(s):  
Hao Zhu ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Zhiguo Liu
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Si 3.5 Sb 2 Te 3 Phase Change Material for Low-Power Phase Change Memory Application

2010 ◽  
Vol 27 (10) ◽  
pp. 108101 ◽  
Author(s):  
Ren Kun ◽  
Rao Feng ◽  
Song Zhi-Tang ◽  
Wu Liang-Cai ◽  
Zhou Xi-Lin ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Si2Sb2Te6Phase Change Material for Low-Power Phase Change Memory Application

2009 ◽  
Vol 2 (9) ◽  
pp. 091401 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Feng Rao ◽  
Bo Liu ◽  
...  
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Polyamorphism in K2Sb8Se13 for multi-level phase-change memory

2020 ◽  
Vol 8 (19) ◽  
pp. 6364-6369 ◽  
Author(s):  
Meng Xu ◽  
Chong Qiao ◽  
Kan-Hao Xue ◽  
Hao Tong ◽  
Xiaomin Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Phase Change Memory ◽  
State Data ◽  
Amorphous Phases ◽  
Multi Level ◽  
Change Material ◽  
Change Memory

A novel phase-change material K2Sb8Se13 with two amorphous phases was thoroughly investigated for multi-state data storage.

Nitrogen-doped Sb-rich Si–Sb–Te phase-change material for high-performance phase-change memory

2013 ◽  
Vol 61 (19) ◽  
pp. 7324-7333 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Yan Cheng ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
High Performance ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Material ◽  
Change Memory

Etching characteristics of phase change material GeTe in inductively coupled BCl3/Ar plasma for phase change memory

2016 ◽  
Vol 161 ◽  
pp. 69-73 ◽  
Author(s):  
Yangyang Xia ◽  
Bo Liu ◽  
Qing Wang ◽  
Zhonghua Zhang ◽  
Shasha Li ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Inductively Coupled ◽  
Ar Plasma ◽  
Change Material ◽  
Change Memory

Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory

2014 ◽  
Vol 594 ◽  
pp. 82-86 ◽  
Author(s):  
Kun Ren ◽  
Feng Rao ◽  
Zhitang Song ◽  
Shilong Lu ◽  
Cheng Peng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
High Speed ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory
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