Phase change material W0.04(Sb4Te)0.96 for application in high-speed phase change memory

2014 ◽  
Vol 594 ◽  
pp. 82-86 ◽  
Author(s):  
Kun Ren ◽  
Feng Rao ◽  
Zhitang Song ◽  
Shilong Lu ◽  
Cheng Peng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
High Speed ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Polyamorphism in K2Sb8Se13 for multi-level phase-change memory

2020 ◽  
Vol 8 (19) ◽  
pp. 6364-6369 ◽  
Author(s):  
Meng Xu ◽  
Chong Qiao ◽  
Kan-Hao Xue ◽  
Hao Tong ◽  
Xiaomin Cheng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Phase Change Memory ◽  
State Data ◽  
Amorphous Phases ◽  
Multi Level ◽  
Change Material ◽  
Change Memory

A novel phase-change material K2Sb8Se13 with two amorphous phases was thoroughly investigated for multi-state data storage.

Nitrogen-doped Sb-rich Si–Sb–Te phase-change material for high-performance phase-change memory

2013 ◽  
Vol 61 (19) ◽  
pp. 7324-7333 ◽  
Author(s):  
Xilin Zhou ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Yan Cheng ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
High Performance ◽  
Phase Change Memory ◽  
Nitrogen Doped ◽  
Change Material ◽  
Change Memory

Etching characteristics of phase change material GeTe in inductively coupled BCl3/Ar plasma for phase change memory

2016 ◽  
Vol 161 ◽  
pp. 69-73 ◽  
Author(s):  
Yangyang Xia ◽  
Bo Liu ◽  
Qing Wang ◽  
Zhonghua Zhang ◽  
Shasha Li ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Inductively Coupled ◽  
Ar Plasma ◽  
Change Material ◽  
Change Memory

Ga2Te3 phase change material for low-power phase change memory application

2010 ◽  
Vol 97 (8) ◽  
pp. 083504 ◽  
Author(s):  
Hao Zhu ◽  
Jiang Yin ◽  
Yidong Xia ◽  
Zhiguo Liu
Keyword(s):  
Low Power ◽  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Carbon-Doped Sb-Rich Ge-Sb-Te Phase Change Material for High Speed and High Thermal Stability Phase Change Memory Applications

2017 ◽  
Vol 898 ◽  
pp. 1834-1838
Author(s):  
Tao Li ◽  
Liang Cai Wu ◽  
Zhi Tang Song ◽  
San Nian Song ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Data Retention ◽  
Carbon Doped ◽  
Sputtering Power ◽  
Memory Applications ◽  
Change Material ◽  
High Crystallization Temperature ◽  
Change Memory

Carbon-doped Sb-rich Ge-Sb-Te (Sb-CGST) is proved to be a promising candidate for phase change memory because of it high crystallization temperature (higher than 200°C) and 10-year data retention temperature (higher than 120°C). The carbon-doped Sb-rich Ge-Sb-Te (Sb-CGST) films were deposited on SiO2/Si (100) substrate by RF magnetron co-sputtering using CGST alloy target (a GST target containing 16 at. % C) and Sb targets at room temperature. The content of Sb in the films was controlled by adjusting the sputtering power ratio of CGST and Sb. The results showed that both of these two properties increase firstly and then decreases with increasing the content of Sb, which are superior to that of Ge2Sb2Te5. Furthermore, Sb-CGST based PCM cells were fabricated to investigate the property of material. 6ns pulse could realize SET operation, and 3.2 x 10-11J energy can realize RESET operation.

Advantages of SiSb phase-change material and its applications in phase-change memory

2007 ◽  
Vol 91 (22) ◽  
pp. 222102 ◽  
Author(s):  
Ting Zhang ◽  
Zhitang Song ◽  
Feng Wang ◽  
Bo Liu ◽  
Songlin Feng ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory

Investigation on Sb-rich Sb–Se–Te phase-change material for phase change memory application

2012 ◽  
Vol 358 (17) ◽  
pp. 2409-2411 ◽  
Author(s):  
Liangcai Wu ◽  
Min Zhu ◽  
Zhitang Song ◽  
Shilong Lv ◽  
Xilin Zhou ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Change Material ◽  
Change Memory
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