Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

2014 ◽  
Vol 115 (11) ◽  
pp. 113705 ◽  
Author(s):  
Bohr-Ran Huang ◽  
Chung-Chi Liao ◽  
Wen-Cheng Ke ◽  
Yuan-Ching Chang ◽  
Hao-Ping Huang ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Zno Films ◽  
Frenkel Effect ◽  
Doped Zno ◽  
P Type

Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films

2006 ◽  
Vol 88 (17) ◽  
pp. 172103 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Takeshi Morikawa ◽  
Takeshi Ohwaki ◽  
Yasunori Taga
Keyword(s):  
Thermal Oxidation ◽  
Electrical Characterization ◽  
Zno Films ◽  
Doped Zno ◽  
P Type

scholarly journals Electrical characterization of In-N codoped p-type ZnO films grown by chemical methods

2014 ◽  
Vol 558 ◽  
pp. 012038
Author(s):  
M Duta ◽  
S Simeonov ◽  
D Spasov ◽  
S Mihaiu ◽  
M Anastasescu ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Zno Films ◽  
Chemical Methods ◽  
P Type

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Preparation and Characterization of Zn1-XMnxO Thin Films on SiO2 Substrates

2012 ◽  
Vol 560-561 ◽  
pp. 820-824
Author(s):  
Yue Zhi Zhao ◽  
Fei Xiong ◽  
Guo Mian Gao ◽  
Shi Jing Ding
Keyword(s):  
Thin Films ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Flat Surfaces ◽  
Atomic Force ◽  
Mn Content ◽  
Doped Zno ◽  
Mn Doped

Mn-doped ZnO thin films were prepared on SiO2substrates by using a radio-frequency(rf) magnetron sputtering in order to investigate structure and optical proprieties of the films. X-ray diffraction (XRD), Atomic force microscope (AFM) and UV-VIS spectrophotometry were employed to characterize the Mn-doped ZnO films. The results showed that the shape of the XRD spectrum was remarkably similar to that of the un-doped ZnO film; the film had mainly (002) peak, and indicate that the structure of the films was not disturbed by Mn-doped. The film had rather flat surfaces with the peak-to-tail roughness of about 25nm. Mn-doping changed the band gap of the films, which increased with the increase of the Mn content.

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