Electrical characterization of p-type N-doped ZnO films prepared by thermal oxidation of sputtered Zn3N2 films

2006 ◽  
Vol 88 (17) ◽  
pp. 172103 ◽  
Author(s):  
Yoshitaka Nakano ◽  
Takeshi Morikawa ◽  
Takeshi Ohwaki ◽  
Yasunori Taga
Keyword(s):  
Thermal Oxidation ◽  
Electrical Characterization ◽  
Zno Films ◽  
Doped Zno ◽  
P Type

Poole-Frenkel effect on electrical characterization of Al-doped ZnO films deposited on p-type GaN

2014 ◽  
Vol 115 (11) ◽  
pp. 113705 ◽  
Author(s):  
Bohr-Ran Huang ◽  
Chung-Chi Liao ◽  
Wen-Cheng Ke ◽  
Yuan-Ching Chang ◽  
Hao-Ping Huang ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Zno Films ◽  
Frenkel Effect ◽  
Doped Zno ◽  
P Type

scholarly journals Electrical characterization of In-N codoped p-type ZnO films grown by chemical methods

2014 ◽  
Vol 558 ◽  
pp. 012038
Author(s):  
M Duta ◽  
S Simeonov ◽  
D Spasov ◽  
S Mihaiu ◽  
M Anastasescu ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Zno Films ◽  
Chemical Methods ◽  
P Type

P-Type Nitrogen-Doped ZnO Films Prepared by In-Situ Thermal Oxidation of Zn 3 N 2 Films

2016 ◽  
Vol 33 (5) ◽  
pp. 058101 ◽  
Author(s):  
Yu-Ping Jin ◽  
Bin Zhang ◽  
Jian-Zhong Wang ◽  
Li-Qun Shi
Keyword(s):  
Thermal Oxidation ◽  
Zno Films ◽  
Nitrogen Doped ◽  
Doped Zno ◽  
P Type

P-TYPE ALUMINIUM-NITROGEN CO-DOPED ZnO FILMS PREPARED BY THERMAL OXIDATION OF SPUTTERED Zn3N2:Al PRECURSORS

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2992-2998 ◽  
Author(s):  
C.-W. ZOU ◽  
R.-Q. CHEN ◽  
E. HAEMMERLE ◽  
W. GAO
Keyword(s):  
Thermal Oxidation ◽  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Different Temperatures ◽  
Chemical States ◽  
Temperature Window ◽  
Doped Zno ◽  
P Type ◽  
Co Doped

P -type ( Al , N ) co-doped ZnO films have been prepared by thermal oxidation of sputtered Zn 3 N 2: Al precursor films. The Zn 3 N 2: Al precursors are deposited by RF magnetron sputter and then annealed in oxygen atmosphere at different temperatures. The doped ZnO films are characterized by XRD, XPS and Hall effect measurement. The results indicate that the ZnO films only show p -type conductivity with an annealing in a temperature window: ZnO films show the best p -type characteristics with a hole concentration of 4.2 × 1017 cm -3, mobility of 0.52 cm/V.s and resistivity of 28Ωcm after an annealing at 550°C. Using these p -type ZnO films, ZnO p - n junctions are prepared which show good diode characteristics. The chemical states of N and Al dopants in the ZnO host material are investigated by XPS method after annealing at different temperatures; and the doping mechanisms are discussed based on the XPS results.

Improved electrical characterization of Al–Ti ohmic contacts on p-type ion implanted 6H-SiC

2003 ◽  
Vol 18 (6) ◽  
pp. 554-559 ◽  
Author(s):  
F Moscatelli ◽  
A Scorzoni ◽  
A Poggi ◽  
G C Cardinali ◽  
R Nipoti
Keyword(s):  
Ohmic Contacts ◽  
Electrical Characterization ◽  
P Type ◽  
Ion Implanted
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