Giant dielectric constant in TiO2/Al2O3nanolaminates grown on doped silicon substrate by pulsed laser deposition

2014 ◽  
Vol 115 (9) ◽  
pp. 094103 ◽  
Author(s):  
P. Walke ◽  
R. Bouregba ◽  
A. Lefevre ◽  
G. Parat ◽  
F. Lallemand ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Giant Dielectric ◽  
Doped Silicon ◽  
Giant Dielectric Constant

scholarly journals Epitaxial thin films of the giant-dielectric-constant material CaCu3Ti4O12 grown by pulsed-laser deposition

2002 ◽  
Vol 81 (11) ◽  
pp. 2056-2058 ◽  
Author(s):  
W. Si ◽  
E. M. Cruz ◽  
P. D. Johnson ◽  
P. W. Barnes ◽  
P. Woodward ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Nano-Cube MgO Formed on Silicon Substrate Using Pulsed Laser Deposition

2012 ◽  
Vol 12 (3) ◽  
pp. 2320-2325
Author(s):  
Satoru Kaneko ◽  
Takeshi Ito ◽  
Kensuke Akiyama ◽  
Manabu Yasui ◽  
Yasuo Hirabayashi ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed Laser Deposition of BaxSr1−xTiO3 Films on MgO, LaAlO3 and SrTiO3 for Tunable Microwave Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
Wontae Chang ◽  
James S. Horwitz ◽  
Won-Jeong Kim ◽  
Jeffrey M. Pond ◽  
Steven W. Kirchoefer ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Electric Field ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Film Stress ◽  
Donor Acceptor ◽  
Bst Films

AbstractSingle phase BaxSr1−xTiO3 (BST) films (∼0.5-7 μm thick) have been deposited onto single crystal substrates (MgO, LaAlO3, SrTiO3) by pulsed laser deposition. Silver interdigitated electrodes were deposited on top of the ferroelectric film. The room temperature capacitance and dielectric Q (1/tanδ) of the film have been measured as a function of electric field (≤80 kV/cm) at 1 - 20 GHz. The dielectric properties of the film are observed to strongly depend on substrate type and post-deposition processing. After annealing (≤1000° C), it was observed that the dielectric constant and % tuning decreased and the dielectric Q increased for films deposited onto MgO, and the opposite effect was observed for films deposited onto LaA1O3. Presumably, this change in dielectric properties is due to the changes in film stress. Very thin (∼50 Å) amorphous BST films were successfully used as a stress-relief layer for the subsequently deposited crystalline BST (∼5000 Å) films to maximize % tuning and dielectric Q. Films have been deposited from stoichiometric targets and targets that have excess Ba and Sr. The additional Ba and Sr has been added to the target to compensate for deficiencies in Ba and Sr observed in the deposited BST (x=0.5) films. Films deposited from compensated targets have higher dielectric constants than films deposited from stoichiometric targets. Donor/acceptor dopants have also been added to the BST target (Mn, W, Fe ≤4 mol.%) to further improve the dielectric properties. The relationship between the dielectric constant, the dielectric Q, the change in dielectric constant with electric field is discussed.

High dielectric constant in CaCu3Ti4O12 thin film prepared by pulsed laser deposition

2003 ◽  
Vol 445 (1) ◽  
pp. 7-13 ◽  
Author(s):  
Y.L. Zhao ◽  
G.W. Pan ◽  
Q.B. Ren ◽  
Y.G. Cao ◽  
L.X. Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
High Dielectric Constant ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Dielectric

Preferred growth of epitaxial TiN thin film on silicon substrate by pulsed laser deposition

1998 ◽  
Vol 33 (7) ◽  
pp. 1777-1782 ◽  
Author(s):  
S XU ◽  
L DU ◽  
K SUGIOKA ◽  
K TOYODA ◽  
S XU
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Pulsed Laser ◽  
Laser Deposition

Growth and optical properties of Ge oxide thin film on silicon substrate by pulsed laser deposition

2004 ◽  
Vol 331 (3-4) ◽  
pp. 248-251 ◽  
Author(s):  
Y.F. Mei ◽  
G.G. Siu ◽  
X.H. Huang ◽  
K.W. Cheah ◽  
Z.G. Dong ◽  
...  
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Film

Pulsed laser deposition of PZT/BaRuO3BI-Layered films on silicon substrate

1997 ◽  
Vol 195 (1) ◽  
pp. 199-202 ◽  
Author(s):  
W-Ping Xu ◽  
Mei Gu ◽  
Lirong Zheng ◽  
Huoping Xin ◽  
Zechun Cao ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Pulsed Laser ◽  
Laser Deposition

Growth and Characterization of Titanium Nitride Nanowires on Silicon Substrate Using Pulsed Laser Deposition Method for Biological Applications

2013 ◽  
Author(s):  
Seyram Gbordzoe ◽  
K. Mensah-Darkwa ◽  
Ram Gupta ◽  
Dhananjay Kumar
Keyword(s):  
Titanium Nitride ◽  
Pulsed Laser Deposition ◽  
Silicon Substrate ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Laser Deposition ◽  
Sem Images ◽  
Crystal Silicon

The present work reports on the growth and characterization of titanium nitride (TiN) nanowires on silicon substrate using a pulsed laser deposition (PLD) method. The TiN nanowires were grown on single crystal silicon substrate with (100) and (111) orientations at a range of substrate temperatures and under both nitrogen ambient and vacuum. The different orientation of silicon was chosen to see the effect of the substrate orientation on the growth of TiN nanowires. The laser energy entering the vacuum chamber to impinge the TiN target for nanowire deposition was varied from 70 to 80 mJ. The TiN nanowires samples were characterized using Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). The diameter of the nanowires was observed to increase from 25 nm to 40 nm with an increase in laser beam energy entering the chamber. The shape and orientation of the nanowires was observed to be the same for (100) and (111) oriented silicon substrates as observed in SEM images. Corrosion tests were also conducted on the TiN nanowires.

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