scholarly journals Epitaxial thin films of the giant-dielectric-constant material CaCu3Ti4O12 grown by pulsed-laser deposition

2002 ◽  
Vol 81 (11) ◽  
pp. 2056-2058 ◽  
Author(s):  
W. Si ◽  
E. M. Cruz ◽  
P. D. Johnson ◽  
P. W. Barnes ◽  
P. Woodward ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Giant Dielectric ◽  
Giant Dielectric Constant

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

TbMnO3 epitaxial thin films by pulsed-laser deposition

2005 ◽  
Vol 133 (10) ◽  
pp. 641-645 ◽  
Author(s):  
Yimin Cui ◽  
Chunchang Wang ◽  
Bisong Cao
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films

scholarly journals Y(Ni, Mn)O3 epitaxial thin films prepared by pulsed laser deposition

2004 ◽  
Vol 201 (10) ◽  
pp. 2385-2389 ◽  
Author(s):  
Yanwei Ma ◽  
M. Guilloux-Viry ◽  
O. Pena ◽  
C. Moure
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films

scholarly journals Pulsed laser deposition of air-sensitive hydride epitaxial thin films: LiH

APL Materials ◽  
2015 ◽  
Vol 3 (9) ◽  
pp. 096106 ◽  
Author(s):  
Hiroyuki Oguchi ◽  
Shigehito Isobe ◽  
Hiroki Kuwano ◽  
Susumu Shiraki ◽  
Shin-ichi Orimo ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films

Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

1992 ◽  
Vol 268 ◽  
Author(s):  
D.B. Fenner ◽  
O. Li ◽  
P.W. Morrison ◽  
J. Cosgrove ◽  
L. Lynds ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Narrow Band ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Wide Band ◽  
Compound Semiconductor ◽  
Laser Deposition ◽  
Epitaxial Thin Films

ABSTRACTThe successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.

Fabrication of Yy‐Pr1‐y ‐Ba‐Cu‐O Thin Films and Superlattices of ‐Ba‐Cu‐O/Yy‐Pr1‐y ‐Ba‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
X. D. Wu ◽  
M. S. Hegde ◽  
X. X. Xi ◽  
Q. Li ◽  
A. Inam ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Epitaxial Thin Films ◽  
Transition Temperatures ◽  
Deposition Technique ◽  
Good Crystallinity ◽  
Zero Resistance

AbstractWe have prepared epitaxial thin films of Yy‐Pr1‐y‐Ba‐Cu‐O (y= 1 to 0) and superlattices of Y‐Ba‐Cu‐O/Yy‐Pr1‐y ‐Ba‐Cu‐O using pulsed laser deposition technique. The zero resistance transition temperatures of Yy‐Pr1‐y‐Ba‐Cu‐O bulk samples are reproduced in the films. The composition oscillations in the superlattices are observed by SIMS. The films and superlattices are found to have c‐axis orientations and good crystallinity.

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