Interface defects in SiC power MOSFETs - An electrically detected magnetic resonance study based on spin dependent recombination

2014 ◽  
Author(s):  
Gernot Gruber ◽  
Peter Hadley ◽  
Markus Koch ◽  
Dethard Peters ◽  
Thomas Aichinger
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Power Mosfets ◽  
Interface Defects ◽  
Electrically Detected Magnetic Resonance

(Invited) Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study

2017 ◽  
Vol 80 (1) ◽  
pp. 147-153 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Hironori Yoshioka ◽  
Geon Woo Kim ◽  
Shijie Ma ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Interface Defects ◽  
Electrically Detected Magnetic Resonance

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Interface Defects ◽  
Electrically Detected Magnetic Resonance

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.

Defects in HfO2 Based Dielectric Gate Stacks

2009 ◽  
Vol 1155 ◽  
Author(s):  
Patrick M. Lenahan ◽  
Jason T. Ryan ◽  
Corey J. Cochrane ◽  
John F. Conley
Keyword(s):  
Magnetic Resonance ◽  
Dielectric Films ◽  
Gate Stacks ◽  
Paramagnetic Resonance ◽  
Oxygen Interstitial ◽  
Interface Defects ◽  
Interstitial Defects ◽  
Electrically Detected Magnetic Resonance ◽  
Multiple Interface ◽  
Electron Paramagnetic

AbstractWe report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.

Sign in / Sign up

Export Citation Format

Share Document