scholarly journals Non-equilibrium deposition of phase pure Cu2O thin films at reduced growth temperature

APL Materials ◽  
2014 ◽  
Vol 2 (2) ◽  
pp. 022105 ◽  
Author(s):  
Archana Subramaniyan ◽  
John D. Perkins ◽  
Ryan P. O’Hayre ◽  
Stephan Lany ◽  
Vladan Stevanovic ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Phase Pure ◽  
Cu2o Thin Films ◽  
Non Equilibrium

scholarly journals Texture and Bandgap Tuning of Phase Pure Cu2O Thin Films Grown By a Simple Potentiostatic Electrodeposition Technique

2020 ◽  
Author(s):  
Farhad Syed
Keyword(s):  
Thin Films ◽  
Texture Coefficient ◽  
Domain Size ◽  
Photoelectrochemical Cell ◽  
Electrodeposition Technique ◽  
Zero Bias ◽  
Potentiostatic Electrodeposition ◽  
Phase Pure ◽  
Cu2o Thin Films ◽  
Bandgap Tuning

Highly textured phase pure Cu2O thin films have been grown by a simple electrodeposition technique with varying deposition voltages (-0.3 to -1.0 V). The surface morphology characterized by Scanning Electron Microscopy (SEM) revealed that the deposited thin films coherently carpet the underlying substrate and composed of sharp faceted well-define grains of 0.5 – 1.0 µm sizes. XRD analyses showed that all films are composed of polycrystalline cubic Cu2O phase only and have average crystalline domain size in the range 30 – 73 nm. The preferred crystalline orientation of phase pure Cu2O films were found to be changing from (200) to (111) with increasing cathodic voltages and showed highest (111) and (200) crystalline texture coefficient while grown at -1.0 and -0.8 V respectively. Optical bandgap of the as-grown samples were calculated in the range (1.95 – 2.20) eV using UV-Vis Transmission data. The performance of copper oxide films was tested by estimating LED 'ON/OFF' modulated surface photovoltage into a photoelectrochemical cell at a zero bias.

scholarly journals Texture and Bandgap Tuning of Phase Pure Cu2o Thin Films Grown By a Simple Potentiostatic Electrodeposition Technique

2020 ◽  
Vol MA2020-01 (19) ◽  
pp. 1212-1212 ◽  
Author(s):  
Syed Farid Uddin Farhad ◽  
Mohammad Moazzem Hossain ◽  
Nazmul Islam Tanvir ◽  
Suravi Islam
Keyword(s):  
Thin Films ◽  
Electrodeposition Technique ◽  
Potentiostatic Electrodeposition ◽  
Phase Pure ◽  
Cu2o Thin Films ◽  
Bandgap Tuning

Target stoichiometry and growth temperature impact on properties of BiVO4 (010) epitaxial thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (43) ◽  
pp. 6950-6956 ◽  
Author(s):  
Guoqiang Li ◽  
Shiwen Kou ◽  
Feng Zhang ◽  
Weifeng Zhang ◽  
Haizhong Guo
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Growth Temperature ◽  
Epitaxial Film ◽  
Polycrystalline Sample ◽  
Epitaxial Thin Films ◽  
Phase Pure ◽  
Temperature Impact

Phase-pure BiVO4 epitaxial film fabricated from a nonstoichiometric target at 680 °C shows higher photocatalytic activity than the polycrystalline sample.

scholarly journals Open-Air, Low-Temperature Deposition of Phase Pure Cu2O Thin Films as Efficient Hole-Transporting Layers for Silicon Heterojunction Solar Cells

2021 ◽  
Author(s):  
Van Son Nguyen ◽  
Abderrahime Sekkat ◽  
Daniel Bellet ◽  
Guy Chichignoud ◽  
Anne Kaminski-Cachopo ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrogenated Amorphous Silicon ◽  
Heterojunction Solar Cells ◽  
Alternative Materials ◽  
Phase Pure ◽  
Hole Transporting ◽  
Temperature Deposition ◽  
Cu2o Thin Films ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

Recent research focuses on finding alternative materials and fabrication techniques to replace traditional (p) and (n) doped hydrogenated amorphous silicon (a-Si:H) to reduce cost and boost the efficiency of Silicon...

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

scholarly journals Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Surface Defects ◽  
Different Temperatures ◽  
Pb Doping ◽  
Pristine Film

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document