Target stoichiometry and growth temperature impact on properties of BiVO4 (010) epitaxial thin films

CrystEngComm ◽  
2018 ◽  
Vol 20 (43) ◽  
pp. 6950-6956 ◽  
Author(s):  
Guoqiang Li ◽  
Shiwen Kou ◽  
Feng Zhang ◽  
Weifeng Zhang ◽  
Haizhong Guo
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Growth Temperature ◽  
Epitaxial Film ◽  
Polycrystalline Sample ◽  
Epitaxial Thin Films ◽  
Phase Pure ◽  
Temperature Impact

Phase-pure BiVO4 epitaxial film fabricated from a nonstoichiometric target at 680 °C shows higher photocatalytic activity than the polycrystalline sample.

Crystallization of Epitaxial Lanthanum Aluminate and Spinel Thin Films Derived from Nitrate Precursors

1994 ◽  
Vol 341 ◽  
Author(s):  
Man Fai Ng ◽  
Michael J. Cima
Keyword(s):  
Thin Films ◽  
Epitaxial Film ◽  
Amorphous Film ◽  
Zero Field ◽  
Epitaxial Thin Films ◽  
Lanthanum Aluminate ◽  
Initial Nucleation ◽  
Metalorganic Deposition ◽  
Current Densities ◽  
Higher Temperature

AbstractBoth lanthanum aluminate (LaAIO 3) and spinel (MgAl2O 4) epitaxial thin films have been deposited on either planar and stepped (100) SrTiO3 single crystal substrates by pyrolysis of mixed nitrate precursors. The precursors pyrolyze initially into amorphous films. Nucleation of lanthanum aluminate and spinel occurs at the filnVsubstrate interface at higher temperature. Crystallization of LaAlO3 on SrTiO3 substrates occurs at approximately 650°C, whereas nucleation occurs at approximately 800'C without lattice-matched substrates. Similarly, latticematched substrates reduce the crystallization temperature of spinel to below 700°C. The epitaxial film grows at the expense of the amorphous film after the initial nucleation at the interface. The rapid growth and volume change due to the crystallization leave behind an epitaxial film with nanoporosity of 15 to 30 nm. Nevertheless, the surfaces of these films have roughness of only 6–9 Å. Ba2Ycu3O7-x films derived from metalorganic deposition of metal trifluoroacetate precursors was deposited on these epitaxial LaAlO3 films on both planar and stepped SrTiO3 substrates. The resultant YBCO films on LaAlO3 film on planar SrTiO3 substrate have critical current densities of > 2 × 106 A/cm2 at 77K and zero field.

Strain Relaxation in Si1-xGex Thin Films on Si (100) Substrates: Modeling and Comparisons with Experiments

2005 ◽  
Vol 875 ◽  
Author(s):  
Kedarnath Kolluri ◽  
Luis A. Zepeda-Ruiz ◽  
Cheruvu S. Murthy ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Mechanical Response ◽  
Epitaxial Film ◽  
Film Growth ◽  
Strain Relaxation ◽  
Mean Field ◽  
Substrate Thickness ◽  
Threading Dislocation ◽  
Epitaxial Thin Films ◽  
Dislocation Generation

AbstractStrained semiconductor thin films grown epitaxially on semiconductor substrates of different composition, such as Si1-xGex/Si, are becoming increasingly important in modern microelectronic technologies. In this paper, we report a hierarchical computational approach for analysis of dislocation formation, glide motion, multiplication, and annihilation in Si1-xGex epitaxial thin films on Si substrates. Specifically, a condition is developed for determining the critical film thickness with respect to misfit dislocation generation as a function of overall film composition, film compositional grading, and (compliant) substrate thickness. In addition, the kinetics of strain relaxation in the epitaxial film during growth or thermal annealing (including post-implantation annealing) is analyzed using a properly parameterized dislocation mean-field theoretical model, which describes plastic deformation dynamics due to threading dislocation propagation. The theoretical results for Si1-xGex epitaxial thin films grown on Si (100) substrates are compared with experimental measurements and are used to discuss film growth and thermal processing protocols toward optimizing the mechanical response of the epitaxial film.

Effect of Growth Temperature on Magnetism of GdFe12 Epitaxial Thin Films

2020 ◽  
Vol 30 (6) ◽  
pp. 189-194
Author(s):  
Daegill Cho ◽  
Sangkyun Ryu ◽  
Hyoungjeen Jeen
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Epitaxial Thin Films

Ferroelectricity of BiFeO3 Thin Films by Pulsed Laser Deposition and Effect of Atmosphere

2006 ◽  
Vol 320 ◽  
pp. 45-48
Author(s):  
Hyun Young Go ◽  
Naoki Wakiya ◽  
Keisuke Satoh ◽  
Masao Kondo ◽  
Jeffrey S. Cross ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Pulsed Laser Deposition ◽  
Epitaxial Film ◽  
Pulsed Laser ◽  
The Other ◽  
Laser Deposition ◽  
Phase Pure ◽  
Hysteresis Properties

In this study, BiFeO3 (BFO) epitaxial film was deposited on SrRuO3 (100)/SrTiO3 (100) substrates using pulsed laser deposition (PLD). Phase pure BFO thin film was obtained. Introducing a mask between the target and substrate in PLD improved the surface roughness from 47.8 nm (RMS, without mask) to 7.7 nm (RMS, with mask). The composition and electrical properties of BFO thin film were assessed after annealing for 1 h in Ar, N2, or O2 atmosphere at 600°C. The P-E hysteresis properties improved only in the O2 atmosphere. After annealing under O2 atmosphere, the leakage current decreased from 6.1 × 10-2 A/cm to 2.9 × 10-2 A/cm at 200 kV/cm, as in the other annealing atmospheres, but 2Pr increased from 35 BC/cm2 to 50 BC/cm2.

scholarly journals Non-equilibrium deposition of phase pure Cu2O thin films at reduced growth temperature

APL Materials ◽  
2014 ◽  
Vol 2 (2) ◽  
pp. 022105 ◽  
Author(s):  
Archana Subramaniyan ◽  
John D. Perkins ◽  
Ryan P. O’Hayre ◽  
Stephan Lany ◽  
Vladan Stevanovic ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Phase Pure ◽  
Cu2o Thin Films ◽  
Non Equilibrium

Photocatalytic degradation of methylene blue from aqueous solutions using nanopillars-TiO2 thin films: Batch reactor studies

2018 ◽  
Vol 18 (3) ◽  
pp. 81-91 ◽  
Author(s):  
C. Lalhriatpuia
Keyword(s):  
Thin Films ◽  
Methylene Blue ◽  
Photocatalytic Activity ◽  
Organic Carbon ◽  
Photocatalytic Degradation ◽  
Batch Reactor ◽  
Tio2 Thin Films ◽  
Initial Concentration ◽  
Bet Specific Surface Area ◽  
Interfering Ions

Nanopillars-TiO2 thin films was obtained on a borosilicate glass substrate with (S1) and without (S2) polyethylene glycol as template. The photocatalytic behaviour of S1 and S2 thin films was assessed inthe degradation of methylene blue (MB) dye from aqueous solution under batch reactor operations. The thin films were characterized by the SEM, XRD, FTIR and AFM analytical methods. BET specific surface area and pore sizes were also obtained. The XRD data confirmed that the TiO2 particles are in its anatase mineral phase. The SEM and AFM images indicated the catalyst is composed with nanosized pillars of TiO2, evenly distributed on the surface of the substrate. The BET specific surface area and pore sizes of S1 and S2 catalyst were found to be 5.217 and 1.420 m2/g and 7.77 and 4.16 nm respectively. The photocatalytic degradation of MB was well studied at wide range of physico-chemical parameters. The effect of solution pH (pH 4.0 to 10.0) and MB initial concentration (1.0 to 10.0 mg/L) was extensively studied and the effect of several interfering ions, i.e., cadmium nitrate, copper sulfate, zinc chloride, sodium chloride, sodium nitrate, sodium nitrite, glycine, oxalic acid and EDTA in the photocatalytic degradation of MB was demonstrated. The maximum percent removal of MB was observed at pH 8.0 beyond which it started decreasing and a low initial concentration of the pollutant highly favoured the photocatalytic degradation using thin films and the presence of several interfering ions diminished the photocatalytic activity of thin films to some extent. The overall photocatalytic activity was in the order: S2 > S1 > UV. The photocatalytic degradation of MB was followed the pseudo-first-order rate kinetics. The mineralization of MB was studied with total organic carbon measurement using the TOC (total organic carbon) analysis.

Sign in / Sign up

Export Citation Format

Share Document