scholarly journals The creation of 360° domain walls in ferromagnetic nanorings by circular applied magnetic fields

2014 ◽  
Vol 115 (17) ◽  
pp. 17D135 ◽  
Author(s):  
Jessica E. Bickel ◽  
Spencer A. Smith ◽  
Katherine E. Aidala
Keyword(s):  
Magnetic Fields ◽  
Domain Walls ◽  
The Creation ◽  
Ferromagnetic Nanorings

scholarly journals Giant conductivity of mobile non-oxide domain walls

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. Ghara ◽  
K. Geirhos ◽  
L. Kuerten ◽  
P. Lunkenheimer ◽  
V. Tsurkan ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Domain Wall ◽  
Domain Walls ◽  
Building Blocks ◽  
External Fields ◽  
Tail Domain ◽  
Oxide Electronics ◽  
Domain Wall Mobility ◽  
Conductance Changes ◽  
Wall Mobility

AbstractAtomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive domain walls have been exclusively observed in oxides, where domain wall mobility and conductivity is largely influenced by stoichiometry and defects. Here, we report on giant conductivity of domain walls in the non-oxide ferroelectric GaV4S8. We observe conductive domain walls forming in zig-zagging structures, that are composed of head-to-head and tail-to-tail domain wall segments alternating on the nanoscale. Remarkably, both types of segments possess high conductivity, unimaginable in oxide ferroelectrics. These effectively 2D domain walls, dominating the 3D conductance, can be mobilized by magnetic fields, triggering abrupt conductance changes as large as eight orders of magnitude. These unique properties demonstrate that non-oxide ferroelectrics can be the source of novel phenomena beyond the realm of oxide electronics.

scholarly journals Information storage in permalloy modulated magnetic nanowires

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Guidobeth Sáez ◽  
Pablo Díaz ◽  
Eduardo Cisternas ◽  
Eugenio E. Vogel ◽  
Juan Escrig
Keyword(s):  
Magnetic Material ◽  
Phase Diagram ◽  
Magnetic Fields ◽  
Domain Walls ◽  
Wire Diameter ◽  
Information Storage ◽  
Magnetic Nanowires ◽  
The Wire ◽  
The Stability ◽  
Cylindrical Wire

AbstractA long piece of magnetic material shaped as a central cylindrical wire (diameter $$d=50$$ d = 50 nm) with two wider coaxial cylindrical portions (diameter $$D=90$$ D = 90 nm and thickness $$t=100$$ t = 100 nm) defines a bimodulated nanowire. Micromagnetism is invoked to study the equilibrium energy of the system under the variations of the positions of the modulations along the wire. The system can be thought of as composed of five independent elements (3 segments and 2 modulations) leading to $$2^5=32$$ 2 5 = 32 possible different magnetic configurations, which will be later simplified to 4. We investigate the stability of the configurations depending on the positions of the modulations. The relative chirality of the modulations has negligible contributions to the energy and they have no effect on the stability of the stored configuration. However, the modulations are extremely important in pinning the domain walls that lead to consider each segment as independent from the rest. A phase diagram reporting the stability of the inscribed magnetic configurations is produced. The stability of the system was then tested under the action of external magnetic fields and it was found that more than 50 mT are necessary to alter the inscribed information. The main purpose of this paper is to find whether a prototype like this can be complemented to be used as a magnetic key or to store information in the form of firmware. Present results indicate that both possibilities are feasible.

Driving chiral domain walls in antiferromagnets using rotating magnetic fields

2018 ◽  
Vol 97 (18) ◽  
Author(s):  
Keming Pan ◽  
Lingdi Xing ◽  
H. Y. Yuan ◽  
Weiwei Wang
Keyword(s):  
Magnetic Fields ◽  
Domain Walls ◽  
Rotating Magnetic Fields

scholarly journals Nanoscale strain engineering of giant pseudo-magnetic fields, valley polarization, and topological channels in graphene

2020 ◽  
Vol 6 (19) ◽  
pp. eaat9488 ◽  
Author(s):  
C.-C. Hsu ◽  
M. L. Teague ◽  
J.-Q. Wang ◽  
N.-C. Yeh
Keyword(s):  
Magnetic Fields ◽  
Domain Walls ◽  
Quantum Hall ◽  
Strain Engineering ◽  
Scanning Tunneling ◽  
Monolayer Graphene ◽  
Tunneling Microscopy ◽  
One Dimensional ◽  
Valley Polarization ◽  
Topological States

The existence of nontrivial Berry phases associated with two inequivalent valleys in graphene provides interesting opportunities for investigating the valley-projected topological states. Examples of such studies include observation of anomalous quantum Hall effect in monolayer graphene, demonstration of topological zero modes in “molecular graphene” assembled by scanning tunneling microscopy, and detection of topological valley transport either in graphene superlattices or at bilayer graphene domain walls. However, all aforementioned experiments involved nonscalable approaches of either mechanically exfoliated flakes or atom-by-atom constructions. Here, we report an approach to manipulating the topological states in monolayer graphene via nanoscale strain engineering at room temperature. By placing strain-free monolayer graphene on architected nanostructures to induce global inversion symmetry breaking, we demonstrate the development of giant pseudo-magnetic fields (up to ~800 T), valley polarization, and periodic one-dimensional topological channels for protected propagation of chiral modes in strained graphene, thus paving a pathway toward scalable graphene-based valleytronics.

The motion of 180° domain walls in uniform dc magnetic fields

1974 ◽  
Vol 45 (12) ◽  
pp. 5406-5421 ◽  
Author(s):  
N. L. Schryer ◽  
L. R. Walker
Keyword(s):  
Magnetic Fields ◽  
Domain Walls

Dynamics of Dzyaloshinskii Domain Walls Driven by Spin Hall Effect in the Presence of Magnetic Fields

SPIN ◽  
2017 ◽  
Vol 07 (01) ◽  
pp. 1740004
Author(s):  
Chengkun Song ◽  
Chendong Jin ◽  
Jianbo Wang ◽  
Qingfang Liu
Keyword(s):  
Magnetic Fields ◽  
Hall Effect ◽  
Domain Walls ◽  
Domain Wall Motion ◽  
Spin Hall Effect ◽  
Micromagnetic Simulations ◽  
Out Of Plane ◽  
Device Applications ◽  
Metal Bilayers ◽  
The Magnetic Field

Current-induced domain wall motion (CIDWM) in perpendicularly magnetized materials exhibits large potential in spintronic device applications. The Dzyaloshinskii domain walls (DWs) are nucleated in ultrathin ferromagnetic/heavy-metal bilayers with high perpendicular magnetocrystalline anisotropy (PMA) in the presence of interfacial Dzyaloshinskii–Moriya interaction (DMI). Here, we investigate the effect of magnetic fields on Dzyaloshinskii DWs driven by spin Hall effect (SHE) by means of micromagnetic simulations. We find that magnetic fields can modify the dynamics of Dzyaloshinskii DW. When applying out-of-plane magnetic fields, the velocity of Dzyaloshinskii DWs increases when the field-driven and current-driven DW motion are in same direction, while it decreases with opposite direction. In the case of in-plane longitudinal magnetic fields, Dzyaloshinskii DW velocity increases when the direction of the magnetic field and Dzyaloshinskii DW propagation direction are same, and it decreases when applying opposite in-plane magnetic fields. These manifestations may offer a new method for manipulating Dzyaloshinskii DWs and promise applications in DW-based nanodevices.

scholarly journals Packing 360∘ domain walls of identical circulation on planar ferromagnetic nanowires with notches using circular magnetic fields

AIP Advances ◽  
2016 ◽  
Vol 6 (5) ◽  
pp. 056408 ◽  
Author(s):  
F. I. Kaya ◽  
A. Sarella ◽  
D. Wang ◽  
M. Tuominen ◽  
K. E. Aidala
Keyword(s):  
Magnetic Fields ◽  
Domain Walls ◽  
Ferromagnetic Nanowires

Introduction and pinning of domain walls in 50nm NiFe constrictions using local and external magnetic fields

2016 ◽  
Vol 406 ◽  
pp. 166-170 ◽  
Author(s):  
G. Zahnd ◽  
V.T. Pham ◽  
A. Marty ◽  
M. Jamet ◽  
C. Beigné ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Domain Walls ◽  
Pinning Of Domain Walls
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