Effects of Oxygen During Close-Spaced Sublimation of CdTe Solar Cells

1996 ◽  
Vol 426 ◽  
Author(s):  
D. H. Rose ◽  
D. S. Albin ◽  
R. J. Matson ◽  
A. B. Swartzlander ◽  
X. S. Li ◽  
...  

AbstractThe presence of oxygen during close-spaced sublimation (CSS) deposition of CdTe has been regarded as necessary for high-efficiency CdS/CdTe solar cells. To date, research has focused on the effect of oxygen on the acceptor density in the CdTe absorber. We find that although oxygen may influence the doping density, a perhaps more significant effect is its influence on nucleation and growth of the film. Oxygen partial pressures of 0 to 24 torr and total pressures of 5 to 45 torr (balance He) have been explored for CSS depositions. We find that increasing the O2 partial pressure increases the density of CdTe nucleation sites, thereby suppressing pinhole formation and likely reducing defects at the junction. However, increasing O2 also tends to decrease grain size and faceting in the films. In addition to influencing the film properties, O2 adversely affects the source material, producing non-uniformly oxidized surfaces that reduce deposition rates and impair device uniformity and run-to-run reproducibility.We have also determined that the graphite susceptors typically used with CSS deposition convert a portion of the oxygen ambient to CO and CO2 during deposition. The amount converted is highly dependent on the type and age of the graphite susceptor used. The COx byproducts are not efficiently incorporated in the CdTe film and do not influence the deposition as oxygen does. We describe the effect of the changing oxygen partial pressure during the course of deposition. Finally, we report high-efficiency solar cells (12.8% AM 1.5) made without oxygen.

2001 ◽  
Vol 668 ◽  
Author(s):  
Akhlesh Gupta ◽  
I. Matulionis ◽  
J. Drayton ◽  
A.D. Compaan

ABSTRACTHigh efficiency CdTe solar cells are typically grown with CdTe thicknesses from 3 to 15 μm, although the thickness required for 90% absorption of the incident irradiation at 800 nm is only ∼1 μm. In this paper, we present the effect of CdTe thickness reduction on the performance of CdS/CdTe solar cells in which both the CdS and CdTe films were grown by sputtering. We produced a series of cells with different CdTe thickness (from 0.5 to 3.0 μm), and held the CdS thickness and back-contact-processing constant. The effect of CdTe thickness reduction on the diffusion of CdS into CdTe was studied using optical absorption and x-ray diffraction techniques. Only slight decreases occur in open-circuit voltage, short-circuit current, and fill factor with decrease in CdTe film thickness to 1.0 μm. Almost 10% efficient cells were obtained with 1 μm CdTe. Below 1 μm, all cell parameters decrease more rapidly, including the red quantum efficiency.


Author(s):  
Alessio Bosio

A brief overview of the main photovoltaic technologies is chronologically presented. Single-crystal and multi-crystalline, epitaxial and thin film inorganic materials are widely used as absorbers in high efficiency solar cells and modules. A schematic representation of the principal devices developed in more then 70 years of research will be displayed and commented. Among thin-film technology, cadmium telluride (CdTe) has achieved a truly impressive development that can commercially compete with silicon, which is still the king of the market. Solar cells made on a laboratory scale have reached efficiencies close to 22%, while modules made with fully automated in-line machines show efficiencies above 18%. Based on the research developed in our laboratory, the fabrication processes of both CdTe polycrystalline thin-film solar cells and photovoltaic modules are critically discussed. The most common substrates, the constituent layers and their interaction, the interfaces and the different “tricks” commonly used for obtaining highly efficient devices will be analyzed. A realistic industrial production process will be analytically described.


2008 ◽  
Author(s):  
Bernd Ahrens ◽  
Bastian Henke ◽  
Paul T. Miclea ◽  
Jacqueline A. Johnson ◽  
Stefan Schweizer

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.


2014 ◽  
Vol 116 (19) ◽  
pp. 194504 ◽  
Author(s):  
Matthew P. Lumb ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Robert J. Walters

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