scholarly journals How much better are InGaN/GaN nanodisks than quantum wells—Oscillator strength enhancement and changes in optical properties

2014 ◽  
Vol 104 (5) ◽  
pp. 051116 ◽  
Author(s):  
Lei Zhang ◽  
Leung-Kway Lee ◽  
Chu-Hsiang Teng ◽  
Tyler A. Hill ◽  
Pei-Cheng Ku ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Oscillator Strength ◽  
Strength Enhancement

Optical properties in wurtzite InGaN staggered quantum wells

2015 ◽  
Vol 29 (15) ◽  
pp. 1550076
Author(s):  
Zhenduo Geng ◽  
Yuping Wang
Keyword(s):  
Optical Properties ◽  
Binding Energy ◽  
Quantum Wells ◽  
Oscillator Strength ◽  
Ground State ◽  
Indium Content ◽  
Polarization Field ◽  
Emission Wavelength ◽  
Field Effects ◽  
Optical Susceptibility

The polarization field effects on exciton states and optical properties are studied theoretically in the wurtzite (WZ) In x Ga 1-x N / In y Ga 1-y N staggered quantum wells (QWs). Numerical results show that the polarization field effects are obvious on the Stark shifts of the exciton binding energy, the oscillator strength and the emission wavelength when the well width and Indium content y increase in the symmetric staggered QWs. However, the influences of In x Ga 1-x N well layer are remarkable on exciton states and optical properties when the Indium concentration y is small in the asymmetric staggered QWs. In addition, the ground state linear optical susceptibility is also investigated in the WZ staggered QWs.

scholarly journals Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Xiaowei Wang ◽  
Feng Liang ◽  
Degang Zhao ◽  
Zongshun Liu ◽  
Jianjun Zhu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Layer Thickness ◽  
Stark Effect ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
Three Samples ◽  
Measurement Results ◽  
Cap Layer ◽  
The Difference

Abstract Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well layer. Furthermore, the quantum-confined Stark effect (QCSE) is enhanced with increasing the thickness of GaN cap layer. In addition, compared with the electroluminescence measurement results, we focus on the difference of localization states and defects in three samples induced by various cap thickness to explain the anomalies in room temperature photoluminescence measurements. We found that too thin GaN cap layer will exacerbates the inhomogeneity of localization states in InGaN QW layer, and too thick GaN cap layer will generate more defects in GaN cap layer.

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Study of electron-related intersubband optical properties in three coupled quantum wells wires with triangular transversal section

2015 ◽  
Vol 87 ◽  
pp. 131-136 ◽  
Author(s):  
A. Tiutiunnyk ◽  
V. Tulupenko ◽  
V. Akimov ◽  
R. Demediuk ◽  
A.L. Morales ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Coupled Quantum Wells ◽  
Transversal Section

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

LINEAR AND NONLINEAR INTERSUBBAND OPTICAL ABSORPTION OF FINITE AND INFINITE SEMI-PARABOLIC QUANTUM WELLS

2011 ◽  
Vol 25 (07) ◽  
pp. 497-507 ◽  
Author(s):  
M. J. KARIMI ◽  
A. KESHAVARZ ◽  
A. POOSTFORUSH
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Optical Absorption ◽  
Quantum Well ◽  
Quantum Wells ◽  
Resonant Peak ◽  
Energy Eigenvalues ◽  
Finite Case ◽  
Infinite Case ◽  
Index Changes

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.

Optical properties of extended and localized states in m-plane InGaN quantum wells

2013 ◽  
Vol 102 (10) ◽  
pp. 101102 ◽  
Author(s):  
S. Marcinkevičius ◽  
K. M. Kelchner ◽  
S. Nakamura ◽  
S. P. DenBaars ◽  
J. S. Speck
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Localized States ◽  
Ingan Quantum Wells

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

2004 ◽  
Vol 268 (3-4) ◽  
pp. 336-341 ◽  
Author(s):  
D.S Jiang ◽  
L.F Bian ◽  
X.G Liang ◽  
K Chang ◽  
B.Q Sun ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Structural And Optical Properties
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