Au-catalyzed growth of nanocrystalline Si by pulse jet chemical vapor deposition has been investigated. Au thin film was first deposited on thermally oxidized Si(100), then CH3SiH3 pulse jets were irradiated onto the Au/SiO2/Si(100) surface. The irradiation of the CH3SiH3 jets at 1150 °C resulted in circular patterns with a diameter of ~40 µm on the sample surfaces. In the center of the circular patterns, agglomerations of Au were observed. It was found that the oxide layer was etched and that nanocrystalline Si with diameters ~500 nm was formed in the circular patterns. These results indicate that the nanocrystalline Si was grown by the VLS process in which Si atoms were supplied from the oxide layer, Si substrate, and CH3SiH3 molecules.
Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects