scholarly journals Erratum: “Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown,” [Appl. Phys. Lett. 103, 173501 (2013)]

2014 ◽  
Vol 104 (5) ◽  
pp. 059901
Author(s):  
Hyun-Tak Kim
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Resistance Switching ◽  
Power Pulse

Coexistence of resistance switching and negative differential resistance in the α-Fe2O3 nanorod film

2016 ◽  
Vol 18 (26) ◽  
pp. 17440-17445 ◽  
Author(s):  
Yunyu Cai ◽  
Qinglin Yuan ◽  
Yixing Ye ◽  
Jun Liu ◽  
Changhao Liang
Keyword(s):  
Tin Oxide ◽  
Glass Substrate ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Resistance Switching ◽  
Oxide Glass ◽  
Switching Behaviour

The coexistence of resistance switching behaviour and the negative differential resistance phenomenon was presented in the α-Fe2O3 nanorod film that was in situ grown on a fluorine-doped tin oxide glass substrate. The migration of inner defects is revealed to be closely related to the switching behaviours.

Negative differential resistance and resistance switching behaviors in BaTiO3 thin films

2014 ◽  
Vol 115 (20) ◽  
pp. 204515 ◽  
Author(s):  
G. Yang ◽  
C. H. Jia ◽  
Y. H. Chen ◽  
X. Chen ◽  
W. F. Zhang
Keyword(s):  
Thin Films ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Resistance Switching

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

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