Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown

2013 ◽  
Vol 103 (17) ◽  
pp. 173501 ◽  
Author(s):  
Hyun-Tak Kim
2016 ◽  
Vol 18 (26) ◽  
pp. 17440-17445 ◽  
Author(s):  
Yunyu Cai ◽  
Qinglin Yuan ◽  
Yixing Ye ◽  
Jun Liu ◽  
Changhao Liang

The coexistence of resistance switching behaviour and the negative differential resistance phenomenon was presented in the α-Fe2O3 nanorod film that was in situ grown on a fluorine-doped tin oxide glass substrate. The migration of inner defects is revealed to be closely related to the switching behaviours.


2014 ◽  
Vol 115 (20) ◽  
pp. 204515 ◽  
Author(s):  
G. Yang ◽  
C. H. Jia ◽  
Y. H. Chen ◽  
X. Chen ◽  
W. F. Zhang

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...


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