Influence of carbon content on the copper-telluride phase formation and on the resistive switching behavior of carbon alloyed Cu-Te conductive bridge random access memory cells

2014 ◽  
Vol 115 (5) ◽  
pp. 054501 ◽  
Author(s):  
Wouter Devulder ◽  
Karl Opsomer ◽  
Alexis Franquet ◽  
Johan Meersschaut ◽  
Attilio Belmonte ◽  
...  
Keyword(s):  
Carbon Content ◽  
Phase Formation ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Copper Telluride ◽  
Conductive Bridge

Complementary resistive switching behavior for conductive bridge random access memory

2016 ◽  
Vol 9 (6) ◽  
pp. 064201 ◽  
Author(s):  
Hao-Xuan Zheng ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Cheng Shih ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Conductive Bridge

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

2015 ◽  
Vol 106 (21) ◽  
pp. 213505 ◽  
Author(s):  
Yi-Ting Tseng ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Chih-Cheng Shih ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Resistance Random Access Memory ◽  
Current Compliance
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