Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

2015 ◽  
Vol 106 (21) ◽  
pp. 213505 ◽  
Author(s):  
Yi-Ting Tseng ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Chih-Cheng Shih ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Resistance Random Access Memory ◽  
Current Compliance

scholarly journals Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

2014 ◽  
Vol 35 (2) ◽  
pp. 217-219 ◽  
Author(s):  
Tian-Jian Chu ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
...  
Keyword(s):  
Induced Resistance ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Resistance Random Access Memory

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Complementary resistive switching behavior for conductive bridge random access memory

2016 ◽  
Vol 9 (6) ◽  
pp. 064201 ◽  
Author(s):  
Hao-Xuan Zheng ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Chih-Cheng Shih ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Conductive Bridge
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