Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with an ultrathin amorphous In0.6Ga0.4As buffer layer

2014 ◽  
Vol 104 (4) ◽  
pp. 042104 ◽  
Author(s):  
Fangliang Gao ◽  
Guoqiang Li
Keyword(s):  
Buffer Layer ◽  
Gaas Substrate

A highly mismatched InxGa1−xAs/AlGaAs (0 ≦ x ≦ 0.5) pseudomorphic HEMT on GaAs substrate using an Inx/2Ga1−x/2As buffer layer

1997 ◽  
Vol 41 (10) ◽  
pp. 1469-1474 ◽  
Author(s):  
Takashi Mizutani ◽  
K. Maezawa ◽  
Jun-Ichi Nozaki ◽  
Masashi Arakawa ◽  
Shigeru Kishimoto
Keyword(s):  
Buffer Layer ◽  
Gaas Substrate

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

scholarly journals Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer

2019 ◽  
Vol 191 ◽  
pp. 406-412 ◽  
Author(s):  
Qi Lu ◽  
Richard Beanland ◽  
Denise Montesdeoca ◽  
Peter J. Carrington ◽  
Andrew Marshall ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gaas Substrate ◽  
Low Bandgap ◽  
Metamorphic Buffer

Double Axis X-Ray Diffractometry Analysis of the Homoepitaxial Interface Between Substrate and Buffer Layer

1990 ◽  
Vol 208 ◽  
Author(s):  
G. Stephan Green ◽  
Brian K. Tanner ◽  
Philip Kightley
Keyword(s):  
Buffer Layer ◽  
Interfacial Layer ◽  
Gaas Substrate ◽  
Interface Layer ◽  
Lattice Parameter ◽  
Good Match ◽  
Low Contrast ◽  
X Ray ◽  
Gaas Substrates ◽  
Transmission Electron

ABSTRACTHigh resolution double axis X-ray diffractometry has been undertaken on InGaAs/AlGaAs strained layer epitaxial systems on (001) GaAs substrates. A clear set of fringes has been identified which arises due to the presence of an imperfect layer at the interface between the GaAs substrate and the undoped GaAs epitaxial buffer layer. The period corresponds to the Pendellosung period for the whole epitaxial layer stack. These fringes have very low contrast and are not present in all specimens studied. Detailed simulations have been undertaken assuming a thin interfacial layer of GaAs with a different lattice parameter to the substrate. The system is equivalent to a Bragg case X-ray interferometer. Fringe amplitude is found to vary linearly with interface layer thickness and increases with mismatch of this layer. A good match between experiment and simulation was obtained for a 1 nm layer mismatched by 3000 ppm. The presence of such a layer, probably GaCxAsl-x has been confirmed by transmission electron microscopy. We show that highly sh'rained layers of this thickness between layers over 1 micron in thickness can lead to splitting of high intensity layer peaks, giving rise to possible misinterpretation of data.

Arsenic-free GaAs substrate preparation and direct growth of GaAs/AlGaAs multiple quantum well without buffer layer

1995 ◽  
Vol 150 ◽  
pp. 13-17 ◽  
Author(s):  
Kanji Iizuka ◽  
Kazuo Matsumaru ◽  
Toshimasa Suzuki ◽  
Haruo Hirose ◽  
Kenji Suzuki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Substrate Preparation ◽  
Direct Growth

Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate

2002 ◽  
Vol 242 (1-2) ◽  
pp. 95-103 ◽  
Author(s):  
J.S Song ◽  
J.H Chang ◽  
S.K Hong ◽  
M.W Cho ◽  
H Makino ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Gaas Substrate

Dependence of the HVPE GaN epilayer on GaN buffer layer for GaN direct growth on (001) GaAs substrate

1997 ◽  
Vol 41 (2) ◽  
pp. 333-338 ◽  
Author(s):  
Harutoshi Tsuchiya ◽  
Atsushi Takeuchi ◽  
Akira Matsuo ◽  
Fumio Hasegawa
Keyword(s):  
Buffer Layer ◽  
Gaas Substrate ◽  
Direct Growth ◽  
Gan Buffer Layer
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