Determination of the intrinsic and the injection dependent charge carrier density in organic solar cells using the Suns-VOCmethod

2014 ◽  
Vol 115 (4) ◽  
pp. 044506 ◽  
Author(s):  
Sebastian Schiefer ◽  
Birger Zimmermann ◽  
Uli Würfel
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Organic Solar Cells ◽  
Carrier Density ◽  
Charge Carrier Density

scholarly journals Quantifying charge carrier density in organic solar cells by differential charging techniques

AIP Advances ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 125205 ◽  
Author(s):  
Kyohei Nakano ◽  
Yujiao Chen ◽  
Keisuke Tajima
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Organic Solar Cells ◽  
Carrier Density ◽  
Charge Carrier Density

Study on Organic Triplet Exciton Emission and Quenching Processes by Low-temperature Photo- and Electroluminescence Spectroscopy

2008 ◽  
Vol 1115 ◽  
Author(s):  
Nils Asmus Kristian Kaufmann ◽  
Frank Jessen ◽  
M. Heuken ◽  
Herbert Boerner ◽  
Holger Kalisch ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Carrier ◽  
Carrier Density ◽  
Organic Materials ◽  
Energy Levels ◽  
Triplet Exciton ◽  
Light Sources ◽  
Charge Carrier Density ◽  
Electrical Excitation

AbstractOrganic light emitting diodes (OLED) are efficient light sources based on organic semiconductors. Unlike inorganic LEDs which are more or less point sources, OLED are planar light sources with up to 1 m2 in area. By using organic materials, they are cheap to produce and economical to use. The determination of triplet exciton energy levels is of interest for the development of efficient OLED, based on the fact that electrical excitation usually creates three times as many triplets as singlets. Additionally, the knowledge of these energy levels is crucial for the design and choice of emitter matrix materials and exciton blocking layers. These values are normally determined by photoluminescence (PL) measurements in solution for materials which show intersystem crossing (ISC) between singlet and triplet states. For some materials, the triplet levels cannot be measured this way because some materials prohibit ISC. In this work, a method is presented which allows the determination of the energy levels using low-temperature electroluminescence (EL) spectroscopy. The dependence on ISC is avoided by creating triplets directly with electrical excitation and this allows to measure a large class of organic materials. A low-temperature EL spectrum is presented for N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine (TPD) in a 3-phenyl-4-(1‘-naphthyl)-5-phenyl-1,2,4-triazole (TAZ) matrix (TPD/TAZ 1:3) at 77 K. Triplet emission is only observed at very low charge carrier density (0.5 μA/mm2). Quenching processes are analyzed using combined EL and PL measurements and unipolar devices. Two factors can be the cause of the quenching: A strong quenching based on a low concentration of electrically activated impurities could explain the dependency. The other explanation points to a quenching based on electrons in the emitting layer. This might be explained with triplet-polaron quenching (TPQ). TPQ is proportional to the charge carrier density and contributes the dominant part to the quenching at low current densities.

Relation between charge carrier density and lifetime in polymer-fullerene solar cells

2012 ◽  
Vol 112 (4) ◽  
pp. 044502 ◽  
Author(s):  
Anil K. Thakur ◽  
Henri Baboz ◽  
Guillaume Wantz ◽  
Justin Hodgkiss ◽  
Lionel Hirsch
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Carrier Density ◽  
Charge Carrier Density

Determination of wavelength dependence of the effective charge carrier density of photorefractive crystals

1999 ◽  
Vol 163 (4-6) ◽  
pp. 212-216
Author(s):  
S.X. Dou ◽  
Juntae Kim ◽  
Seungwoo Yi ◽  
Jaichul Yi ◽  
Sungdo Cha ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Effective Charge ◽  
Carrier Density ◽  
Wavelength Dependence ◽  
Charge Carrier Density ◽  
Photorefractive Crystals

Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

2011 ◽  
Author(s):  
Guillaume Celi ◽  
Sylvain Dudit ◽  
Thierry Parrassin ◽  
Philippe Perdu ◽  
Antoine Reverdy ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Laser Beam ◽  
Integrated Circuit ◽  
Carrier Density ◽  
Deep Submicron ◽  
Charge Carrier Density ◽  
Voltage Imaging ◽  
A New Technique ◽  
Scan Chain

Abstract For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated circuit. In this paper, we propose a new technique based on the LVI technique to debug a scan chain related issue. We describe the method to use LVI, usually dedicated to frequency mapping of digital active parts, in a way that enables localization of resistive leakage. Origin of this signal is investigated on a 40nm case study. This signal can be properly understood when two different effects, charge carrier density variations (LVI) and thermo reflectance effect (Thermal Frequency Imaging, TFI), are taken into account.

Influence of Interface Doping on Charge-Carrier Mobilities and Sub-Bandgap Absorption in Organic Solar Cells

2015 ◽  
Vol 119 (17) ◽  
pp. 9036-9040 ◽  
Author(s):  
Felix Herrmann ◽  
Burhan Muhsin ◽  
Chetan Raj Singh ◽  
Sviatoslav Shokhovets ◽  
Gerhard Gobsch ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Organic Solar Cells
Sign in / Sign up

Export Citation Format

Share Document