Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects

2014 ◽  
Vol 104 (2) ◽  
pp. 023512 ◽  
Author(s):  
Xiang-Wei Jiang ◽  
Jian Gong ◽  
Nuo Xu ◽  
Shu-Shen Li ◽  
Jinfeng Zhang ◽  
...  
ACS Nano ◽  
2021 ◽  
Author(s):  
Hope Bretscher ◽  
Zhaojun Li ◽  
James Xiao ◽  
Diana Yuan Qiu ◽  
Sivan Refaely-Abramson ◽  
...  

2021 ◽  
Author(s):  
Mubashir A. Kharadi ◽  
Gul Faroz A. Malik ◽  
Farooq A. Khanday

2D materials like transition metal dichalcogenides, black phosphorous, silicene, graphene are at the forefront of being the most potent 2D materials for optoelectronic applications because of their exceptional properties. Several application-specific photodetectors based on 2D materials have been designed and manufactured due to a wide range and layer-dependent bandgaps. Different 2D materials stacked together give rise to many surprising electronic and optoelectronic phenomena of the junctions based on 2D materials. This has resulted in a lot of popularity of 2D heterostructures as compared to the original 2D materials. This chapter presents the progress of optoelectronic devices (photodetectors) based on 2D materials and their heterostructures.


Nanoscale ◽  
2021 ◽  
Author(s):  
Pu Tan ◽  
Kaixuan Ding ◽  
Xiumei Zhang ◽  
Zhenhua Ni ◽  
Kostya Ostrikov ◽  
...  

Because of suitable band gap and high mobility, two-dimensional transition metal dichalcogenides (TMDs) materials are promising in future microelectronic devices. However, controllable p-type and n-type doping of TMDs is still...


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