Formation of regularly arranged large grain silicon islands by using embedded micro mirrors in the flash crystallization of amorphous silicon

2014 ◽  
Vol 115 (3) ◽  
pp. 034301 ◽  
Author(s):  
Thomas Henke ◽  
Johann W. Bartha ◽  
Lars Rebohle ◽  
Ulrich Merkel ◽  
René Hübner ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Islands

Plastic Deformation of Thin Foil Substrates with Amorphous Silicon Islands into Spherical Shapes

2000 ◽  
Vol 621 ◽  
Author(s):  
Pai-hui I. Hsu ◽  
Min Huang ◽  
Sigurd Wagner ◽  
Zhigang Suo ◽  
J. C. Sturm
Keyword(s):  
Plastic Deformation ◽  
Amorphous Silicon ◽  
Permanent Deformation ◽  
Spherical Shape ◽  
Thin Foil ◽  
Metal Foil ◽  
Large Area ◽  
Spherical Cap ◽  
Planar Substrates ◽  
Silicon Islands

ABSTRACTThere is a growing interest in the application of large area electronics on curved surfaces. One approach towards realizing this goal is to fabricate circuits on planar substrates of thin plastic or metal foil, which are subsequently deformed into arbitrary shapes. The problem that we consider here is the deformation of substrates into a spherical shape, where the strain is determined by geometry and cannot be reduced by simply using a thinner substrate. The goal is to achieve permanent, plastic deformation in the substrates, without exceeding fracture or buckling limits in the device materials.Our experiments consist of the planar fabrication of amorphous silicon device structures onto stainless steel or Kapton® polyimide substrates, followed by permanent deformation into a spherical shape. We will present empirical experiments showing the dependence of the results on the island/line size of the device materials and the deformation temperature. We have successfully deformed Kapton® polyimide substrates with 100 [.proportional]m wide amorphous silicon islands into a one steradian spherical cap, which subtends 66 degrees, without degradation of the silicon. This work demonstrates the feasibility of building semiconductor devices on plastically deformed substrates despite a 5% average biaxial strain in the substrate after deformation.

Coagulation of In Atoms in Hydrogenated Amorphous Silicon Islands Deposited on ITO Films

1988 ◽  
Vol 27 (Part 2, No. 8) ◽  
pp. L1368-L1370 ◽  
Author(s):  
Takashi Hirao ◽  
Masatoshi Kitagawa ◽  
Koshiro Mori ◽  
Yoshiaki Yoshioka ◽  
Kiyotaka Wasa
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Islands ◽  
Hydrogenated Amorphous ◽  
Ito Films

Machine learning reveals the complexity of dense amorphous silicon

Nature ◽  
2021 ◽  
Vol 589 (7840) ◽  
pp. 22-23
Author(s):  
Paul F. McMillan
Keyword(s):  
Machine Learning ◽  
Amorphous Silicon

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE OF AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-663-C4-666
Author(s):  
X. B. Liao ◽  
G. L. Kong ◽  
X. R. Yang ◽  
P. D. Wang ◽  
Y. Q. Chao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon

RAMAN SCATTERING IN ANNEAL STABLE AMORPHOUS SILICON

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-54-C6-56 ◽  
Author(s):  
S. T. Kshirsagar ◽  
J. S. Lannin
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon
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