Variation of some physical properties of amorphous As[sub 46]Te[sub 46]S[sub 8] thin films depending on substrate temperature and film thickness

2013 ◽  
Author(s):  
A. A. Abu-Sehly
2008 ◽  
Vol 86 (2) ◽  
pp. 379-382 ◽  
Author(s):  
S M Rozati

ZnO:Al(ZAO) films with various amount of solution, in the range 10–120 mL, were prepared on a glass substrate. Deposition was carried out using a spray method, and the substrate temperature was held at 500 °C. It was found that increasing the amount of solution causes the ZnO:Al thin films to exhibit a strong orientation along (002). The variation in the structural properties due to variation in the volume of solution was investigated by means of X-ray diffraction. The lowest sheet resistance obtained was 40 Ω/cm2 for a 120 mL solution. PACS Nos.: 73.61.–r, 78.20.–e


2021 ◽  
Vol 10 (8) ◽  
pp. 084008
Author(s):  
A. Anitha Ezhil Mangaiyar Karasi ◽  
S. Seshadri ◽  
L. Amalraj ◽  
R. Sambasivam

1997 ◽  
Vol 485 ◽  
Author(s):  
D. J. Goyal ◽  
P. G. Bilurkar ◽  
S. K. Thorat ◽  
N. V. Mate

AbstractZinc telluride has the potential of being a low-cost, environmentally stable, lowresistance and easily manufacturable back contact for CdS/CdTe solar cells. Close Spaced Sublimation (CSS) technique is used to deposit thin films of ZnTe. The results are reported in this study.The effects of substrate temperature and film thickness on the structural properties of the deposited thin films are studied. X-ray diffractograms show that all the films prominently exhibit presence of (111) and (200) orientations. However, the degree of the preferred orientation changes as a function of the film thickness. Increase in film thickness reduces the preferential orientation.The as deposited ZnTe thin films, being that of p-type semiconductor, are highly resistive. In order to effectively use these as contact to CdS/CdTe solar cells, they are made more conductive by doping copper. The doping is effected by dipping the films in alcoholic solution of copper chloride, followed by air annealing at 200°C. The resistivity of all the doped films drops drastically in the initial 10 minutes of annealing. The extent of doping is controlled by varying the dipping time.The effects of substrate temperature, film thickness and doping, on the stoichiometry of the films, are studied using Atomic Absorption Spectroscopy (AAS).


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