Giant pyroelectric coefficient determined from the frequency dependence of the pyroelectric signal generated by epitaxial Pb(Zr0.2Ti0.8)O3 layers grown on single crystal SrTiO3 substrates

2013 ◽  
Vol 103 (23) ◽  
pp. 232902 ◽  
Author(s):  
M. Botea ◽  
A. Iuga ◽  
L. Pintilie
Keyword(s):  
Single Crystal ◽  
Frequency Dependence ◽  
Pyroelectric Coefficient

scholarly journals Pyroelectric properties of 91.5Na0.5Bi0.5TiO3–8.5K0.5Bi0.5TiO3 lead-free single crystal

2021 ◽  
Author(s):  
Bo Zhang ◽  
Renbing Sun ◽  
Fang Wang ◽  
Tangfu Feng ◽  
Pengna Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Frequency Dependence ◽  
Room Temperature ◽  
Pyroelectric Coefficient ◽  
Lead Free ◽  
Oriented Crystal ◽  
Depolarization Temperature ◽  
Pyroelectric Properties ◽  
Figures Of Merit ◽  
Crystallographic Orientations

The dielectric and pyroelectric performances of 91.5Na[Formula: see text]Bi[Formula: see text]TiO3–8.5K[Formula: see text]Bi[Formula: see text]TiO3 lead-free single crystal were investigated. The depolarization temperature of the crystal is about 153[Formula: see text]C. Among the [Formula: see text]001[Formula: see text], [Formula: see text]110[Formula: see text], and [Formula: see text]111[Formula: see text] crystallographic orientations, the [Formula: see text]111[Formula: see text]-oriented crystal possesses the highest pyroelectric coefficient and the largest figures of merit, and the values of [Formula: see text], [Formula: see text], [Formula: see text] and [Formula: see text]are 5.63× 10[Formula: see text] C/m2 ⋅ K, 0.06 m2/C, and 21.5 [Formula: see text]Pa[Formula: see text] for the [Formula: see text]111[Formula: see text]-oriented crystal at room temperature. The [Formula: see text]and [Formula: see text]exhibit weak frequency dependence in the range of 100–300 Hz. With the increase of the temperature, the value of [Formula: see text]increases, while the [Formula: see text] value of [Formula: see text] decreases from 18[Formula: see text]C to 103 [Formula: see text]C.

Characterisation of Ferroelectric Lithium Tantalate Thin Films Prepared by a Sol-Gel Process

1993 ◽  
Vol 321 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Single Crystal ◽  
Silicon Substrate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Pyroelectric Coefficient ◽  
Crystal Silicon ◽  
Sol Gel Process

ABSTRACTThin LiTaO3 films were prepared by spin coating of polymerized sol-gel precursor solution. Films have been deposited on single crystal silicon substrate, Ti/Pt or SiO2 coated silicon substrate. Films were characterized by x-ray diffraction, dielectric and pyroelectric Measurements. High Curie temperature (above 550 °C) was assumed for LiTaO3 thin films from the temperature dependence of dielectric constant. Replacing 35% of tantalum by titanium atoms in the LiTaO3 precursor solution has resulted the thin films with Curie temperature of 330 °C. The lower Curie temperature leads to the larger pyroelectric coefficient at room-temperature, which is more than double that of the undoped LiTaO3 thin films. The dielectric, pyroelectric, and ferroelectric properties have been compared to the single crystal LiTaO3 and ceramic Li0.91Ta0.73Ti0.36O3. LiTaO3 thin films are available by sol-gel process at low temperature, and their properties may possibly be controlled by varying the composition of the sol-gel precursor solution.

scholarly journals Электропроводность монокристаллов MnGaInSе-=SUB=-4-=/SUB=- на переменном токе

2020 ◽  
Vol 46 (11) ◽  
pp. 19
Author(s):  
Н.Н. Нифтиев ◽  
Ф.М. Мамедов ◽  
М.Б. Мурадов
Keyword(s):  
Electrical Conductivity ◽  
Single Crystal ◽  
Frequency Dependence ◽  
Electric Current ◽  
Single Crystals ◽  
Activation Energies ◽  
Temperature Range ◽  
Temperature Dependences ◽  
Alternating Electric Current

The results of studying the frequency and temperature dependences of the electrical conductivity of MnGaInSe4 single crystals on alternating electric current are presented. It was found that in the temperature range of 295.5–360 K at frequencies of 2•104–106 Hz, the regularity σ ∼ fS (0.1≤ s≤1.0) holds for electrical conductivity. It is shown that in the MnGaInSe4 single crystal the frequency dependence of electrical conductivity can be explained using the multiplet model, and the conductivity in these single crystals is characterized by a band-hop mechanism. Based on the dependences log σ ∼ 103/T, the activation energies are determined.

scholarly journals Electro-elastic moduli and frequency dependence of KN single crystal

2012 ◽  
Author(s):  
R. Rouffaud ◽  
F. Levassort ◽  
M. Pham-Thi ◽  
E. Leveugle ◽  
A.-C. Hladky-Hennion
Keyword(s):  
Single Crystal ◽  
Frequency Dependence ◽  
Elastic Moduli

Preparation and Physical Properties of BI2TI2O7 Single Crystal Thin Film on SI (100) Substrate by Mocvd

1996 ◽  
Vol 446 ◽  
Author(s):  
Hong Wang ◽  
S. X. Shang ◽  
X. J. Su ◽  
Z. Wang ◽  
M. Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Physical Properties ◽  
Single Crystal ◽  
Frequency Dependence ◽  
Buffer Layer ◽  
Loss Tangent ◽  
Constant E ◽  
Mocvd Technique

AbstractInsulating thin films of Bi2Ti2O7 with (111) orientation have been prepared on silicon (100)–substrates at a temperature range of 480–550 °C by a MOCVD technique. The dielectric and C‐V properties were studied. The dielectric constant (ɛ) and loss tangent (tanδ) were found to be 180 and 0.01, respectively. The temperature and frequency dependence of dielectric constant were also measured. The Bi2Ti2O7 films are suitable to be used as a novel buffer layer and new insulating gate material in FET devices.

Frequency Dependence of Dislocation Damping in Single‐Crystal Copper

1967 ◽  
Vol 38 (8) ◽  
pp. 3294-3302 ◽  
Author(s):  
Clinton R. Heiple ◽  
H. K. Birnbaum
Keyword(s):  
Single Crystal ◽  
Frequency Dependence ◽  
Single Crystal Copper
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