Coercive field of 0.955Pb(Zn1/3Nb2/3)O3–0.045PbTiO3 single crystal and its frequency dependence

2002 ◽  
Vol 80 (6) ◽  
pp. 1043-1045 ◽  
Author(s):  
Jianhua Yin ◽  
Wenwu Cao
Keyword(s):  
Single Crystal ◽  
Frequency Dependence ◽  
Coercive Field

Frequency Dependence of Coercive Field for Lateral Movement of Domain Wall in 180-Degree Ferroelectrics

2003 ◽  
Vol 290 (1) ◽  
pp. 193-198 ◽  
Author(s):  
A. S. Sidorkin ◽  
V. A. Sidorkin ◽  
S. Yu. Radchenko
Keyword(s):  
Domain Wall ◽  
Frequency Dependence ◽  
Coercive Field ◽  
Lateral Movement

The Experimental Investigations on Frequency Dependence of Ferroelectric Properties in Soft PZT-5 Ceramics

2012 ◽  
Author(s):  
Li-Wei Jin ◽  
Yu Su
Keyword(s):  
Frequency Dependence ◽  
Coercive Field ◽  
Remnant Polarization ◽  
Domain Switching ◽  
Ferroelectric Properties ◽  
Ferroelectric Ceramics ◽  
Experimental Investigations ◽  
Loading Frequency ◽  
Specific Domain ◽  
Switching Mechanism

In this work the coupled electromechanical behaviors of the overall properties of ferroelectric ceramics have been experimentally studied with different initial poling states and loading frequencies in order to have a better understanding of their domain switching mechanism. The material under investigation is soft PZT-5 ceramic, which shows noticeable nonlinear response upon externally applied load. The experimental results show that the state of initial poling in the specimens can evidently affect the characteristics of the hysteresis loops. The electrical loading frequency dependence of the ferroelectric properties of PZT-5, e.g., coercive field, remnant polarization, etc., has also been investigated through the tests conducted on the carefully designed multi-field testing system. Despite some common features of frequency dependence shared by all three types of initial poling, it is found out that the effects of loading frequency on the change of coercive field and remnant polarization for the specimen poled perpendicular to the switching axis deviate from those of the other two poling states, and this may be attributed to the specific domain switching mechanism for the perpendicularly poled specimen.

FREQUENCY DEPENDENCE OF THE DIELECTRIC PROPERTIES AND COERCIVE FIELD OF PbZr0.4Ti0.6O3 THIN FILMS

2006 ◽  
Vol 85 (1) ◽  
pp. 31-38 ◽  
Author(s):  
TIAN-ZHI LIU ◽  
ZHI-GANG ZHANG ◽  
DAN XIE ◽  
CHAO-GANG WEI ◽  
TIAN-LING REN ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Frequency Dependence ◽  
Coercive Field

Frequency dependence of the coercive field and the internal bias field in ferroelectric thin films

2009 ◽  
Vol 51 (7) ◽  
pp. 1348-1350 ◽  
Author(s):  
A. S. Sidorkin ◽  
L. P. Nesterenko ◽  
S. V. Ryabtsev ◽  
A. A. Sidorkin
Keyword(s):  
Thin Films ◽  
Frequency Dependence ◽  
Coercive Field ◽  
Bias Field ◽  
Ferroelectric Thin Films ◽  
Internal Bias ◽  
Internal Bias Field

scholarly journals Электропроводность монокристаллов MnGaInSе-=SUB=-4-=/SUB=- на переменном токе

2020 ◽  
Vol 46 (11) ◽  
pp. 19
Author(s):  
Н.Н. Нифтиев ◽  
Ф.М. Мамедов ◽  
М.Б. Мурадов
Keyword(s):  
Electrical Conductivity ◽  
Single Crystal ◽  
Frequency Dependence ◽  
Electric Current ◽  
Single Crystals ◽  
Activation Energies ◽  
Temperature Range ◽  
Temperature Dependences ◽  
Alternating Electric Current

The results of studying the frequency and temperature dependences of the electrical conductivity of MnGaInSe4 single crystals on alternating electric current are presented. It was found that in the temperature range of 295.5–360 K at frequencies of 2•104–106 Hz, the regularity σ ∼ fS (0.1≤ s≤1.0) holds for electrical conductivity. It is shown that in the MnGaInSe4 single crystal the frequency dependence of electrical conductivity can be explained using the multiplet model, and the conductivity in these single crystals is characterized by a band-hop mechanism. Based on the dependences log σ ∼ 103/T, the activation energies are determined.

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