Homogeneous AlGaN/GaN superlattices grown on free-standing (11¯00) GaN substrates by plasma-assisted molecular beam epitaxy

2013 ◽  
Vol 103 (23) ◽  
pp. 232103 ◽  
Author(s):  
Jiayi Shao ◽  
Dmitri N. Zakharov ◽  
Colin Edmunds ◽  
Oana Malis ◽  
Michael J. Manfra
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Standing

scholarly journals Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

2014 ◽  
Vol 403 ◽  
pp. 43-47 ◽  
Author(s):  
S.V. Novikov ◽  
R.E. L. Powell ◽  
C.R. Staddon ◽  
A.J. Kent ◽  
C.T. Foxon
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Standing ◽  
Zinc Blende

Progress on Preparation of InAs Nanowires by Molecular Beam Epitaxy

2016 ◽  
Vol 852 ◽  
pp. 349-355
Author(s):  
Ru Xue Li ◽  
Ji Long Tang ◽  
Dang Fang ◽  
Shuang Peng Wang ◽  
Hai Feng Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Speed ◽  
Molecular Beam ◽  
Light Emission ◽  
Infrared Light ◽  
Dimensional Structure ◽  
Uniform Structure ◽  
Free Standing ◽  
Inas Nanowires ◽  
Low Dimensional

InAs nanowires (NWs) is a key material for high-speed electronics, near-and mid-infrared light emission and detection applications. Much effort has been devoted to the fabrication of InAs NWs and molecular beam epitaxy (MBE) evolved as a powerful method to grow semiconductor nanowires with several interesting features, but it was rarely reported. We present kinds of growths (metal-catalyzed growth, self-catalyzed growth, self-induced free-standing growth, self-induced position-controlled growth, self-assisted nucleation growth etc.) of InAs NWs by MBE, and discuss how to control growth of uniform-structure InAs NWs on homogeneous or heterogeneous substrates, which can provide the reference for the manufacture of low dimensional structure.

GaN/AlN free-standing nanowires grown by molecular beam epitaxy

2008 ◽  
Vol 5 (6) ◽  
pp. 1556-1558 ◽  
Author(s):  
M. Tchernycheva ◽  
C. Sartel ◽  
G. Cirlin ◽  
L. Travers ◽  
G. Patriarche ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Standing

Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN

2008 ◽  
Vol 93 (17) ◽  
pp. 171902 ◽  
Author(s):  
G. Koblmüller ◽  
A. Hirai ◽  
F. Wu ◽  
C. S. Gallinat ◽  
G. D. Metcalfe ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Free Standing ◽  
Structural Anisotropy

Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates

2006 ◽  
Vol 527-529 ◽  
pp. 1489-1492 ◽  
Author(s):  
Donat J. As ◽  
S. Potthast ◽  
J. Schörmann ◽  
S.F. Li ◽  
K. Lischka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Group Iii Nitrides ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
Free Standing ◽  
X Ray ◽  
Group Iii ◽  
Cubic Gan

Cubic GaN, AlxGa1-xN/GaN and InyGa1-yN/GaN multiple quantum well (MQW) layers were grown by plasma assisted molecular beam epitaxy on 200 &m thick free standing 3C-SiC substrates. The influence of the surface roughness of the 3C-SiC substrates and the influence of metal coverage during growth are discussed. Optimum growth conditions of c-III nitrides exist, when a one monolayer Ga coverage is formed at the growing surface. The improvement of the structural properties of cubic III-nitride layers and multilayers grown on 3C-SiC substrates is demonstrated by 1 μm thick c-GaN layers with a minimum x-ray rocking curve width of 16 arcmin, and by c-AlGaN/GaN and c-InGaN/GaN MQWs which showed up to five satellite peaks in X-ray diffraction, respectively.

High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

2014 ◽  
Vol 115 (19) ◽  
pp. 193702 ◽  
Author(s):  
Erin C. H. Kyle ◽  
Stephen W. Kaun ◽  
Peter G. Burke ◽  
Feng Wu ◽  
Yuh-Renn Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Mobility ◽  
Molecular Beam ◽  
High Electron ◽  
Free Standing ◽  
High Electron Mobility

scholarly journals Molecular beam epitaxy of free-standing bulk wurtzite AlxGa1-xN layers using a highly efficient RF plasma source

2016 ◽  
Vol 13 (5-6) ◽  
pp. 217-220 ◽  
Author(s):  
S. V. Novikov ◽  
C. R. Staddon ◽  
S.-L. Sahonta ◽  
R. A. Oliver ◽  
C. J. Humphreys ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Rf Plasma ◽  
Free Standing ◽  
Highly Efficient

Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates

2007 ◽  
Vol 2 (12) ◽  
pp. 761-764 ◽  
Author(s):  
Martin Aagesen ◽  
Erik Johnson ◽  
Claus B. Sørensen ◽  
Simon O. Mariager ◽  
Robert Feidenhans'l ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Free Standing ◽  
Plane Parallel
Sign in / Sign up

Export Citation Format

Share Document