scholarly journals Impact on Structural and Optical Properties of CZTS Thin Films with Solvents and Ge Incorporation

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Abhay Kumar Singh ◽  
Tanka R. Rana ◽  
JunHo Kim ◽  
M. Shkir ◽  
Tien-Chien Jen

This report demonstrates nontoxic colloidal nitrate route CZTS (Cu2ZnSnS4) synthesis at room temperature, along with their band grading due to incorporation of Ge as cost of Sn (3%). The parent CZTS, CZGTS (Cu2ZnGeSnS4), and their polyvinyl alcohol (PVA), dimethyl sulfoxide (DMSO) solvent containing solutions doctor blade-coated thin film structural and optical properties are discussed. Their sulfurized thin films thickness have been achieved ±2 μ. It has noticed that addition of Ge in CZTS alloy affects the grain sizes, crystallographic structure, Raman spectral peak shift toward the higher wave number side. The addition of PVA and DMSO is also substantially contributed in their physical property modification by demonstrating the gradual improvement in grain sizes and compactness. Moreover, the gradual changes have also appeared in their X-ray diffractometer (XRD) and Raman spectroscopic results. The optical energy band gaps of the CZTS, CZGTS, and their PVA, DMSO mixed alloyed thin films are obtained in between 1.27 eV to 1.57 eV and 1.58 eV to 1.83 eV.

2020 ◽  
Vol 12 (3) ◽  
pp. 388-391
Author(s):  
Raees A. Gani Shaikh ◽  
Sagar A. More ◽  
Gauri G. Bisen ◽  
Sanjay S. Ghosh

CZTS chalcopyrite semiconductor has received attention as a promising alternative as an absorber in thin-film solar cells because of the high absorption coefficient, direct bandgap (1.5 eV), nontoxic elements and sustained high electrical and optical properties. In the present work, CZTS thin film has been developed by the sol–gel spin coating method by thermal decomposition of metal ions and thiourea complexes under ambient environment. Annealing study of the above prepared CZTS thin films has been performed. The prepared CZTS samples were annealed at different temperatures 250 °C, 275 °C, 300 °C, and 325 °C respectively. Crystallographic structure, surface morphology, and optical properties were studied. XRD pattern shows the kesterite structure of the films with characteristics peaks for planes (112), (200), (220), and (312). Crystallite size, strain and dislocation densities were calculated. Sample annealed at 300 °C shows the most intense XRD peak and hence larger grain size. Grain size tends to increase as the annealing temperature increases up to 300 °C. At 325 °C SEM images show that cracks are formed in the film. At lower temperatures uniform, homogenous, smooth and densely packed films are formed. Raman spectroscopy is used to determine phase purity because many of binary and ternary chalcogenides show XRD peaks at similar positions to that of CZTS. A single peak at 336 cm–1 shows the pure kestrite phase of CZTS for all films.


2018 ◽  
Vol 53 (1) ◽  
pp. 13-20 ◽  
Author(s):  
S Akhanda ◽  
R Matin ◽  
MS Bashar ◽  
M Sultana ◽  
A Kowsar ◽  
...  

Copper zinc tin sulfide (CZTS) thin films were deposited by spin coating procedure of a sol-gel prepared from the solution of copper (II)chloride, zinc acetate, tin (II) chloride and thiourea in 2-methoxyehtanol followed by annealing under two different atmospheres viz. N2 gas and Sulphur (S) powder at 530 °C for 5 minutes. The effect of different annealing atmosphere on the structural and optical properties of the CZTS thin films were investigated. The X-ray diffraction study showed higher intensity peaks for films annealed under N2 gas ambient. SEM study revealed that the surfaces of the films in both cases are non-uniform. Films annealed in N2 gas atmosphere showed better absorption coefficient (exceeding 104 cm-1 in the visible region) than the sulphurized ones. The optical band gap (Eg) of the films were found to be in the range of 1.46 - 1.53 eV.Bangladesh J. Sci. Ind. Res.53(1), 13-20, 2018


2013 ◽  
Vol 662 ◽  
pp. 463-467 ◽  
Author(s):  
Bi Ju Zheng ◽  
Wen Hu

Cadmium oxide (CdO) thin films were deposited on quartz glass substrates by pulsed laser deposition from ablating Cd metallic targets. The effect of grain size on structural and optical properties of CdO thin films was studied in detail. The structural properties were determined by XRD and a cubic phase was present in all of the as-grown samples. The morphology of CdO films has been investigated by atomic force microscopy. Grain sizes between 156 and 300 nm were determined from the AFM images and increased with laser energy density. The optical properties were studied measuring the transmittance spectra. The room-temperature bandgap energies for each sample were determined from the transmittance by extrapolating absorption coefficient. The bandgap energy varies from 2.31 to 2.55 eV following closely the quantum confinement dependence of energy against crystallite radius. This shows that the absorption edges of these samples are determined primarily by the grain sizes.


2011 ◽  
Vol 306-307 ◽  
pp. 265-268
Author(s):  
Xue Yan Zhang ◽  
Xiao Yu Liu ◽  
Han Bin Wang ◽  
Xi Jian Zhang ◽  
Qing Pu Wang ◽  
...  

Cadmium sulfide (CdS) thin films with (111) preferential orientation were grown on glass substrates at room temperature by radio frequency (R.F.) magnetron sputtering. The structural and optical properties of CdS films have been investigated by X-ray diffraction, Scanning Electron Microscope micrographs, PL spectra and transmittance spectra. The grain sizes have been evaluated. The transmission spectra of the obtained films reveal a relatively high transmission coefficient (80%) in the visible range. All these results show that the grain sizes increased while the optical band gap decreased with increasing the thickness of CdS films.


2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


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