Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations

2013 ◽  
Vol 114 (20) ◽  
pp. 203701 ◽  
Author(s):  
Robert J. Bondi ◽  
Michael P. Desjarlais ◽  
Aidan P. Thompson ◽  
Geoff L. Brennecka ◽  
Matthew J. Marinella
2000 ◽  
Vol 626 ◽  
Author(s):  
M. Fornari ◽  
D. J. Singh ◽  
I. I. Mazin ◽  
J. L. Feldman

ABSTRACTThe key challenges in discovering new high ZT thermoelectrics are understanding how the nearly contradictory requirements of high electrical conductivity, high thermopower and low thermal conductivity can be achieved in a single material and based on this identifying suitable compounds. First principles calculations provide a material specific microscopic window into the relevant properties and their origins. We illustrate the utility of the approach by presenting specific examples of compounds belonging to the class of skutterudites that are or are not good thermoelectrics along with the microscopic reasons. Based on our computational exploration we make a suggestion for achieving higher values of ZT at room temperature in bulk materials, namely n-type La(Ru,Rh)4Sb12 with high La-filling.


2020 ◽  
Vol 49 (20) ◽  
pp. 6682-6692 ◽  
Author(s):  
Ke Shan ◽  
Zhong-Zhou Yi ◽  
Xi-Tao Yin ◽  
Davoud Dastan ◽  
Hamid Garmestani

First-principles calculations were used to explore the effect of various Y-doping levels on the electrical conductivity of SrTiO3.


2016 ◽  
Vol 18 (37) ◽  
pp. 26275-26283 ◽  
Author(s):  
P. C. Sreeparvathy ◽  
V. Kanchana ◽  
G. Vaitheeswaran ◽  
N. E. Christensen

First principles calculations predict the promising thermoelectric material ZnGeSb2with a huge power factor (S2σ/τ) on the order of 3 × 1017W m−1K−2s−1, due to the ultra-high electrical conductivity scaled by a relaxation time of around 8.5 × 1025Ω−1m−1s−1, observed in its massive Dirac state.


1996 ◽  
Vol 79 (8) ◽  
pp. 5282 ◽  
Author(s):  
W. H. Butler ◽  
X.-G. Zhang ◽  
D. M. C. Nicholson ◽  
T. C. Schulthess ◽  
J. M. MacLaren

2020 ◽  
Vol 8 (9) ◽  
pp. 4784-4789 ◽  
Author(s):  
Yonghun Shin ◽  
Kyung-Yeon Doh ◽  
Seong Hun Kim ◽  
June Ho Lee ◽  
Hohan Bae ◽  
...  

Metal to semiconductor transition by hole compensation of excess electrons from VO and localized VO state in La0.5Sr0.5FeO3−δ under low PO2.


Sign in / Sign up

Export Citation Format

Share Document