First principles calculations of electrical conductivity and giant magnetoresistance of periodic multilayers and spin valves (invited)

1996 ◽  
Vol 79 (8) ◽  
pp. 5282 ◽  
Author(s):  
W. H. Butler ◽  
X.-G. Zhang ◽  
D. M. C. Nicholson ◽  
T. C. Schulthess ◽  
J. M. MacLaren
2000 ◽  
Vol 626 ◽  
Author(s):  
M. Fornari ◽  
D. J. Singh ◽  
I. I. Mazin ◽  
J. L. Feldman

ABSTRACTThe key challenges in discovering new high ZT thermoelectrics are understanding how the nearly contradictory requirements of high electrical conductivity, high thermopower and low thermal conductivity can be achieved in a single material and based on this identifying suitable compounds. First principles calculations provide a material specific microscopic window into the relevant properties and their origins. We illustrate the utility of the approach by presenting specific examples of compounds belonging to the class of skutterudites that are or are not good thermoelectrics along with the microscopic reasons. Based on our computational exploration we make a suggestion for achieving higher values of ZT at room temperature in bulk materials, namely n-type La(Ru,Rh)4Sb12 with high La-filling.


2020 ◽  
Vol 49 (20) ◽  
pp. 6682-6692 ◽  
Author(s):  
Ke Shan ◽  
Zhong-Zhou Yi ◽  
Xi-Tao Yin ◽  
Davoud Dastan ◽  
Hamid Garmestani

First-principles calculations were used to explore the effect of various Y-doping levels on the electrical conductivity of SrTiO3.


1996 ◽  
Vol 77 (26) ◽  
pp. 5253-5256 ◽  
Author(s):  
V. N. Antonov ◽  
A. Ya. Perlov ◽  
P. M. Oppeneer ◽  
A. N. Yaresko ◽  
S. V. Halilov

2016 ◽  
Vol 18 (37) ◽  
pp. 26275-26283 ◽  
Author(s):  
P. C. Sreeparvathy ◽  
V. Kanchana ◽  
G. Vaitheeswaran ◽  
N. E. Christensen

First principles calculations predict the promising thermoelectric material ZnGeSb2with a huge power factor (S2σ/τ) on the order of 3 × 1017W m−1K−2s−1, due to the ultra-high electrical conductivity scaled by a relaxation time of around 8.5 × 1025Ω−1m−1s−1, observed in its massive Dirac state.


2020 ◽  
Vol 8 (9) ◽  
pp. 4784-4789 ◽  
Author(s):  
Yonghun Shin ◽  
Kyung-Yeon Doh ◽  
Seong Hun Kim ◽  
June Ho Lee ◽  
Hohan Bae ◽  
...  

Metal to semiconductor transition by hole compensation of excess electrons from VO and localized VO state in La0.5Sr0.5FeO3−δ under low PO2.


2021 ◽  
Author(s):  
Widad Bazine ◽  
Najim TAHIRI ◽  
Omar Elbounagui ◽  
Hamid Ez-Zahraouy

Abstract The Dzyaloshinskii-Moriya interactions (DM) are investigated using first-principles calculations by means of the WIENNCM code, an implementation of the FP-LAPW method. The intermetallic RMn2Si2 (R = La, Ce, Yb, and Y) materials exhibit a large spin-orbit effect after the density of states; they found a strong hybridization between Mn-Si and Mn-R atoms. Also, show a large noncollinear magnetic configuration depending on the R atoms. By using ab-initio calculations, the RKKY effect is observed in the RMn2Si2 materials, which shows explicitly the existence of the giant magnetoresistance (GMR) in these materials. Explicitly, the mechanisms responsible for the magnetoelectric coupling are due to relatively the effect of the presence of the Dzyaloshinskii-Moriya term.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Le Duc Anh ◽  
Taiki Hayakawa ◽  
Yuji Nakagawa ◽  
Hikari Shinya ◽  
Tetsuya Fukushima ◽  
...  

AbstractMaterial structures containing tetrahedral FeAs bonds, depending on their density and geometrical distribution, can host several competing quantum ground states ranging from superconductivity to ferromagnetism. Here we examine structures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bonds embedded with a regular interval in a semiconductor InAs matrix, which resembles the crystal structure of Fe-based superconductors. Contrary to the case of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibit ferromagnetism, whose Curie temperature (TC) increases rapidly with decreasing the InAs interval thickness tInAs (TC ∝ tInAs−3), and an extremely large magnetoresistance up to 500% that is tunable by a gate voltage. Our first principles calculations reveal the important role of disordered positions of Fe atoms in the establishment of ferromagnetism in these quasi-2D FeAs-based SLs. These unique features mark the FeAs/InAs SLs as promising structures for spintronic applications.


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