The Fano-type transmission and field enhancement in heterostructures composed of epsilon-near-zero materials and truncated photonic crystals

2013 ◽  
Vol 103 (20) ◽  
pp. 201902 ◽  
Author(s):  
Zhi-fang Zhang ◽  
Chun-hua Xue ◽  
Hai-tao Jiang ◽  
Hai Lu ◽  
Yun-hui Li ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Field Enhancement ◽  
Epsilon Near Zero

scholarly journals Geometry dependence of field enhancement in 2D metallic photonic crystals

2009 ◽  
Vol 17 (24) ◽  
pp. 22179 ◽  
Author(s):  
Hari P. Paudel ◽  
Khadijeh Bayat ◽  
Mahdi Farrokh Baroughi ◽  
Stanley May ◽  
David W. Galipeau
Keyword(s):  
Photonic Crystals ◽  
Field Enhancement ◽  
Geometry Dependence ◽  
Metallic Photonic Crystals

scholarly journals Quantum plasmonic epsilon near zero: field enhancement and cloaking

2018 ◽  
Vol 26 (12) ◽  
pp. 15656 ◽  
Author(s):  
Ali Khademi ◽  
Timothy Dewolf ◽  
Reuven Gordon
Keyword(s):  
Field Enhancement ◽  
Zero Field ◽  
Epsilon Near Zero

scholarly journals Modeling and observation of mid-infrared nonlocality in effective epsilon-near-zero ultranarrow coaxial apertures

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Daehan Yoo ◽  
Ferran Vidal-Codina ◽  
Cristian Ciracì ◽  
Ngoc-Cuong Nguyen ◽  
David R. Smith ◽  
...  
Keyword(s):  
Field Enhancement ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Large Area ◽  
Infrared Sensors ◽  
Mid Infrared ◽  
Critical Gap ◽  
Nanophotonic Devices ◽  
Extreme Scale ◽  
Epsilon Near Zero

Abstract With advances in nanofabrication techniques, extreme-scale nanophotonic devices with critical gap dimensions of just 1–2 nm have been realized. Plasmons in such ultranarrow gaps can exhibit nonlocal response, which was previously shown to limit the field enhancement and cause optical properties to deviate from the local description. Using atomic layer lithography, we create mid-infrared-resonant coaxial apertures with gap sizes as small as 1 nm and observe strong evidence of nonlocality, including spectral shifts and boosted transmittance of the cutoff epsilon-near-zero mode. Experiments are supported by full-wave 3-D nonlocal simulations performed with the hybridizable discontinuous Galerkin method. This numerical method captures atomic-scale variations of the electromagnetic fields while efficiently handling extreme-scale size mismatch. Combining atomic-layer-based fabrication techniques with fast and accurate numerical simulations provides practical routes to design and fabricate highly-efficient large-area mid-infrared sensors, antennas, and metasurfaces.

scholarly journals Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 922 ◽  
Author(s):  
Jiqing Lian ◽  
Dawei Zhang ◽  
Ruijin Hong ◽  
Peizhen Qiu ◽  
Taiguo Lv ◽  
...  
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Plasma Oscillation ◽  
Field Enhancement ◽  
Fdtd Simulation ◽  
Structural Defects ◽  
Defect States ◽  
Vacancy Defects ◽  
Epsilon Near Zero

Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (Eg) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation.

scholarly journals Magnetic field concentration assisted by epsilon-near-zero media

2017 ◽  
Vol 375 (2090) ◽  
pp. 20160059 ◽  
Author(s):  
Iñigo Liberal ◽  
Yue Li ◽  
Nader Engheta
Keyword(s):  
Magnetic Field ◽  
Enhancement Factor ◽  
Light Emission ◽  
Field Enhancement ◽  
Intrinsic Property ◽  
Inhomogeneous Magnetic Field ◽  
Additional Information ◽  
Magnetic Field Enhancement ◽  
The Magnetic Field ◽  
Epsilon Near Zero

Strengthening the magnetic response of matter at optical frequencies is of fundamental interest, as it provides additional information in spectroscopy, as well as alternative mechanisms to manipulate light at the nanoscale. Here, we demonstrate theoretically that epsilon-near-zero (ENZ) media can enhance the magnetic field concentration capabilities of dielectric resonators. We demonstrate that the magnetic field enhancement factor is unbounded in theory, and it diverges as the size of the ENZ host increases. In practice, the maximal enhancement factor is limited by dissipation losses in the host, and it is found via numerical simulations that ENZ hosts with moderate losses can enhance the performance of a circular dielectric rod resonator by around one order of magnitude. The physical mechanism behind this process is the strongly inhomogeneous magnetic field distributions induced by ENZ media in neighbouring dielectrics. We show that this is an intrinsic property of ENZ media, and that the occurrence of resonant enhancement is independent of the shape of the host. These results might find applications in spectroscopy, in sensing, in light emission and, in general, in investigating light–matter interactions beyond electric dipole transitions. This article is part of the themed issue ‘New horizons for nanophotonics’.

scholarly journals Dynamically controlling local field enhancement at an epsilon-near-zero/dielectric interface via nonlinearities of an epsilon-near-zero medium

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4831-4837
Author(s):  
Alexander Baev ◽  
Paras N. Prasad ◽  
M. Zahirul Alam ◽  
Robert W. Boyd
Keyword(s):  
Local Field ◽  
Enhancement Factor ◽  
Polarized Light ◽  
Field Enhancement ◽  
Field Enhancement Factor ◽  
Local Fields ◽  
Great Promise ◽  
Matrix Formalism ◽  
Local Field Enhancement ◽  
Epsilon Near Zero

AbstractFor p-polarized light incident on an interface between an ordinary dielectric and an epsilon-near-zero (ENZ) material, an enhancement of the component of the electric field, normal to this interface, has been shown to occur. This local field enhancement holds great promise for amplifying nonlinear optical processes and for other applications requiring ultrastrong local fields in epsilon-near-zero based technologies. However, the loss associated with the imaginary part of the dielectric constant of an epsilon-near-zero material can greatly suppress the field enhancement factor. In this study, we analyze, using density matrix formalism, the field enhancement factor for a saturable two-level system that exhibits second- and third-order nonlinearities. We show that, in such a system, an almost lossless ENZ response can arise as a consequence of saturable nonlinearity and that the local field enhancement factor can be readily controlled dynamically by adjusting the intensity of the incident electromagnetic wave. Our findings provide for the first time a pathway to design a material exhibiting an external field responsive epsilon-near-zero behavior for applications in nonlinear photonics.

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