Ferroelectric polarization switching kinetics process in Bi0.9La0.1FeO3 thin films

2013 ◽  
Vol 114 (17) ◽  
pp. 174101 ◽  
Author(s):  
R. L. Gao ◽  
H. W. Yang ◽  
Y. S. Chen ◽  
J. R. Sun ◽  
Y. G. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Polarization Switching ◽  
Ferroelectric Polarization

scholarly journals Thin films of vinylidene fluoride copolymer with tetrafluoroethylene: dynamics of ferroelectric polarization switching

2020 ◽  
Vol 21 (1) ◽  
pp. 43-51
Author(s):  
S. N. Fedosov ◽  
A. E. Sergeeva
Keyword(s):  
Thin Films ◽  
Space Charge ◽  
Polyvinylidene Fluoride ◽  
Vinylidene Fluoride ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Relaxation Processes ◽  
Switching Dynamics ◽  
Additional Processing ◽  
Electrical Induction

The vinylidene fluoride copolymer with tetrafluoroethylene P(VDF-TFE) is a typical ferroelectric polymer that has not been sufficiently studied so far in comparison with pure polyvinylidene fluoride (PVDF) and its copolymer with trifluoroethylene. The purpose of this work was to reveal the features of forming ferroelectric polarization and its switching in thin films of P(VDF-TFE) under various conditions, such as the level of the applied electric field and the duration of its action within 8 orders of magnitude from 10 μs to 100 s. The sequence of voltage pulses applied during poling and polarization reversal allowed to reveal the characteristics of the polarization switching dynamics. To increase the resolution of the measurements, two complementary methods of recording electrical induction were used. The features of polarization and space charge relaxation over time have been studied by thermally stimulated depolarization method. A new phenomenon of gradual separation of the relaxation processes associated with polarization and space charge was observed. Both components were accompanied by trapped charges that compensated the depolarizing field. Several practical recommendations have been formulated regarding the desirable values of poling parameters and additional processing to increase the ferroelectric polarization stability.

Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films

Nanoscale ◽  
2020 ◽  
Vol 12 (25) ◽  
pp. 13421-13430 ◽  
Author(s):  
So-Jung Yoon ◽  
Seung-Eon Moon ◽  
Sung-Min Yoon
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Gate Insulators ◽  
Switching Dynamics ◽  
Artificial Synapse

Biological synaptic behaviors such as short-/long-term plasticity were implemented by ferroelectric polarization switching dynamics of Al-doped HfO2 ferroelectric gate insulators.

scholarly journals Ferroelectric polarization switching with a remarkably high activation energy in orthorhombic GaFeO3 thin films

2016 ◽  
Vol 8 (2) ◽  
pp. e242-e242 ◽  
Author(s):  
Seungwoo Song ◽  
Hyun Myung Jang ◽  
Nam-Suk Lee ◽  
Jong Y Son ◽  
Rajeev Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
High Activation ◽  
High Activation Energy

Effect of polarization switching cycles on the dielectric response and Rayleigh constant in Pb0.4Sr0.6TiO3 thin films

2014 ◽  
Vol 115 (6) ◽  
pp. 064102 ◽  
Author(s):  
Kui Li ◽  
Xianlin Dong ◽  
Denis Rémiens ◽  
Tao Li ◽  
Ying Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Response ◽  
Polarization Switching
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