Implementation of an electrically modifiable artificial synapse based on ferroelectric field-effect transistors using Al-doped HfO2 thin films

Nanoscale ◽  
2020 ◽  
Vol 12 (25) ◽  
pp. 13421-13430 ◽  
Author(s):  
So-Jung Yoon ◽  
Seung-Eon Moon ◽  
Sung-Min Yoon
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Gate Insulators ◽  
Switching Dynamics ◽  
Artificial Synapse

Biological synaptic behaviors such as short-/long-term plasticity were implemented by ferroelectric polarization switching dynamics of Al-doped HfO2 ferroelectric gate insulators.

scholarly journals Thin films of vinylidene fluoride copolymer with tetrafluoroethylene: dynamics of ferroelectric polarization switching

2020 ◽  
Vol 21 (1) ◽  
pp. 43-51
Author(s):  
S. N. Fedosov ◽  
A. E. Sergeeva
Keyword(s):  
Thin Films ◽  
Space Charge ◽  
Polyvinylidene Fluoride ◽  
Vinylidene Fluoride ◽  
Polarization Switching ◽  
Ferroelectric Polarization ◽  
Relaxation Processes ◽  
Switching Dynamics ◽  
Additional Processing ◽  
Electrical Induction

The vinylidene fluoride copolymer with tetrafluoroethylene P(VDF-TFE) is a typical ferroelectric polymer that has not been sufficiently studied so far in comparison with pure polyvinylidene fluoride (PVDF) and its copolymer with trifluoroethylene. The purpose of this work was to reveal the features of forming ferroelectric polarization and its switching in thin films of P(VDF-TFE) under various conditions, such as the level of the applied electric field and the duration of its action within 8 orders of magnitude from 10 μs to 100 s. The sequence of voltage pulses applied during poling and polarization reversal allowed to reveal the characteristics of the polarization switching dynamics. To increase the resolution of the measurements, two complementary methods of recording electrical induction were used. The features of polarization and space charge relaxation over time have been studied by thermally stimulated depolarization method. A new phenomenon of gradual separation of the relaxation processes associated with polarization and space charge was observed. Both components were accompanied by trapped charges that compensated the depolarizing field. Several practical recommendations have been formulated regarding the desirable values of poling parameters and additional processing to increase the ferroelectric polarization stability.

Field-effect transistors with thin films of perylene on SiO2 and polyimide gate insulators

2006 ◽  
Vol 88 (10) ◽  
pp. 103506 ◽  
Author(s):  
Toshio Ohta ◽  
Takayuki Nagano ◽  
Kenji Ochi ◽  
Yoshihiro Kubozono ◽  
Akihiko Fujiwara
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Insulators

Influence of Electric Field on Microstructures of Pentacene Thin-Films in Field-Effect Transistors

2008 ◽  
Vol 18 (2) ◽  
pp. 285-293 ◽  
Author(s):  
H. L. Cheng ◽  
W. Y. Chou ◽  
C. W. Kuo ◽  
Y. W. Wang ◽  
Y. S. Mai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistors

Deoxyribonucleic acid-ceramic hybrid dielectrics for potential application as gate insulators in organic field effect transistors

2013 ◽  
Vol 103 (11) ◽  
pp. 113701 ◽  
Author(s):  
Fahima Ouchen ◽  
Narayanan Venkat ◽  
Donna M. Joyce ◽  
Kristi M. Singh ◽  
Steven R. Smith ◽  
...  
Keyword(s):  
Potential Application ◽  
Field Effect ◽  
Deoxyribonucleic Acid ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Gate Insulators

Microstructure engineering of polymer semiconductor thin films for high-performance field-effect transistors using a bi-component processing solution

2017 ◽  
Vol 5 (14) ◽  
pp. 3568-3578 ◽  
Author(s):  
Dong Gao ◽  
Zhihui Chen ◽  
Jianyao Huang ◽  
Weifeng Zhang ◽  
Congyuan Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconductor Thin Films ◽  
Polymer Semiconductor ◽  
Processing Solution

The performance of polymer field-effect transistors was enhanced by microstructure engineering through the use of a bi-component solvent.

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