Converse magnetoelectric coupling in NiFe/Pb(Mg1/3Nb2/3)O3–PbTiO3 nanocomposite thin films grown on Si substrates

2013 ◽  
Vol 103 (19) ◽  
pp. 192903 ◽  
Author(s):  
Ming Feng ◽  
Jiamian Hu ◽  
Jianjun Wang ◽  
Zheng Li ◽  
Li Shu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetoelectric Coupling ◽  
Si Substrates ◽  
Nanocomposite Thin Films

scholarly journals Strain-mediated magnetoelectric coupling in BaTiO3-Co nanocomposite thin films

2008 ◽  
Vol 92 (6) ◽  
pp. 062908 ◽  
Author(s):  
Jung H. Park ◽  
Hyun M. Jang ◽  
Hyung S. Kim ◽  
Chan G. Park ◽  
Sang G. Lee
Keyword(s):  
Thin Films ◽  
Magnetoelectric Coupling ◽  
Nanocomposite Thin Films

scholarly journals Self-assembled multiferroic epitaxial BiFeO3–CoFe2O4 nanocomposite thin films grown by RF magnetron sputtering

2018 ◽  
Vol 6 (20) ◽  
pp. 5552-5561 ◽  
Author(s):  
Tae Cheol Kim ◽  
Shuchi Ojha ◽  
Guo Tian ◽  
Seung Han Lee ◽  
Hyun Kyu Jung ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Nanocomposite Thin Films ◽  
Self Assembled

Sputter-grown self-assembled epitaxial spinel–perovskite nanocomposites consisting of CoFe2O4 pillars in a BiFeO3 matrix on Nb-doped SrTiO3 or SrTiO3-buffered Si substrates.

Relaxor Ferroelectricity and Magnetoelectric Coupling in ZnO–Co Nanocomposite Thin Films: Beyond Multiferroic Composites

2014 ◽  
Vol 6 (7) ◽  
pp. 4737-4742 ◽  
Author(s):  
D. Y. Li ◽  
Y. J. Zeng ◽  
D. Batuk ◽  
L. M. C. Pereira ◽  
Z. Z. Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetoelectric Coupling ◽  
Nanocomposite Thin Films

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

Fabrication and Evaluation of SiO2 Thin Films on Si Substrates by Microwave Plasma in Various Conditions

2020 ◽  
Vol 140 (4) ◽  
pp. 186-192
Author(s):  
Shumpei Ogawa ◽  
Tatsuya Kuroda ◽  
Yasuyuki Katou ◽  
Hironori Haga ◽  
Hiroki Ishizaki
Keyword(s):  
Thin Films ◽  
Microwave Plasma ◽  
Si Substrates
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