AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

2013 ◽  
Vol 103 (18) ◽  
pp. 181113 ◽  
Author(s):  
E. Cicek ◽  
R. McClintock ◽  
C. Y. Cho ◽  
B. Rahnema ◽  
M. Razeghi
Keyword(s):  
Ultraviolet Photodetector ◽  
Si Substrate ◽  
Lateral Epitaxial Overgrowth ◽  
Solar Blind

Solution-assembled nanowires for high performance flexible and transparent solar-blind photodetectors

2015 ◽  
Vol 3 (3) ◽  
pp. 596-600 ◽  
Author(s):  
Jiangxin Wang ◽  
Chaoyi Yan ◽  
Meng-Fang Lin ◽  
Kazuhito Tsukagoshi ◽  
Pooi See Lee
Keyword(s):  
High Performance ◽  
Switching Time ◽  
Ultraviolet Photodetector ◽  
Assembly Method ◽  
Solar Blind

An all-NW ultraviolet photodetector with high photoresponse and improved switching time was fabricated by a solution assembly method.

scholarly journals Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  
Keyword(s):  
Response Times ◽  
Nanowire Array ◽  
Graphene Film ◽  
Fast Response ◽  
Nanowire Arrays ◽  
Monolayer Graphene ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Decay Times ◽  
First Time

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

Performance of A Single Phosphorus-doped β-Ga2O3 Microwire Solar-blind Ultraviolet Photodetector

2021 ◽  
Vol 42 (11) ◽  
pp. 1653-1660
Author(s):  
Qiu-ju FENG ◽  
◽  
Jin-zhu XIE ◽  
Zeng-jie DONG ◽  
Chong GAO ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Phosphorus Doped

Crystalline properties of ε-Ga2O3 film grown on c-sapphire by MOCVD and solar-blind ultraviolet photodetector

2021 ◽  
Vol 123 ◽  
pp. 105532
Author(s):  
Xu Cao ◽  
Yanhui Xing ◽  
Jun Han ◽  
Junshuai Li ◽  
Tao He ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Ga2o3 Film ◽  
Solar Blind

AlxGa1-xN materials and device technology for solar blind ultraviolet photodetector applications

2001 ◽  
Author(s):  
Ryan McClintock ◽  
Peter M. Sandvik ◽  
Kan Mi ◽  
Fatemeh Shahedipour ◽  
Alireza Yasan ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Device Technology

A flexible and transparent β-Ga2O3 solar-blind ultraviolet photodetector on mica

2020 ◽  
Vol 53 (50) ◽  
pp. 504001
Author(s):  
Yanxin Sui ◽  
Huili Liang ◽  
Wenxing Huo ◽  
Yan Wang ◽  
Zengxia Mei
Keyword(s):  
Ultraviolet Photodetector ◽  
Solar Blind

Responsivity improvement of a packaged ZnMgO solar blind ultraviolet photodetector via a sealing treatment of silica gel

2020 ◽  
Vol 8 (3) ◽  
pp. 1089-1094 ◽  
Author(s):  
Xing Chen ◽  
Liyan Wang ◽  
Kewei Liu ◽  
Zhenzhong Zhang ◽  
Binghui Li ◽  
...  
Keyword(s):  
Silica Gel ◽  
High Performance ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Solar Blind ◽  
Sealing Treatment

A packaged high performance ZnMgO solar-blind UV photodetector is prepared via a silica gel sealing treatment. The responsivity and stability of the device is improved according to this sealing treatment.

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