Free-standing semipolar III-nitride quantum well structures grown on chemical vapor deposited graphene layers

2013 ◽  
Vol 103 (18) ◽  
pp. 181108 ◽  
Author(s):  
Priti Gupta ◽  
A. A. Rahman ◽  
Nirupam Hatui ◽  
Jayesh B. Parmar ◽  
Bhagyashree A. Chalke ◽  
...  
Keyword(s):  
Quantum Well ◽  
Chemical Vapor ◽  
Free Standing ◽  
Quantum Well Structures ◽  
Graphene Layers ◽  
Chemical Vapor Deposited

Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

2006 ◽  
Vol 914 ◽  
Author(s):  
George Andrew Antonelli ◽  
Tran M. Phung ◽  
Clay D. Mortensen ◽  
David Johnson ◽  
Michael D. Goodner ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Coefficient Of Thermal Expansion ◽  
Chemical Vapor ◽  
Dielectric Materials ◽  
Free Standing ◽  
Dielectric Thin Films ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Low K

AbstractThe electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

scholarly journals Highly oriented, free-standing, superconducting NbN films growth on chemical vapor deposited graphene

APL Materials ◽  
2014 ◽  
Vol 2 (5) ◽  
pp. 056103 ◽  
Author(s):  
Garima Saraswat ◽  
Priti Gupta ◽  
Arnab Bhattacharya ◽  
Pratap Raychaudhuri
Keyword(s):  
Chemical Vapor ◽  
Free Standing ◽  
Chemical Vapor Deposited

Enhancement Effect of Plasma Enhanced Chemical Vapor Deposited SiN Capping Layer on Dielectric Cap Quantum Well Disordering

1995 ◽  
Vol 34 (Part 2, No. 4A) ◽  
pp. L418-L421 ◽  
Author(s):  
Won Jun Choi ◽  
Seok Lee ◽  
Jingming Zhang ◽  
YongKim ◽  
Sang Kuk Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Chemical Vapor ◽  
Enhancement Effect ◽  
Capping Layer ◽  
Chemical Vapor Deposited

scholarly journals Optical Properties of Si-DOPED AlxGa1−xN/AlyGa1−yN (x=0.24−0.53, y=0.11) Multi-Quantum-Well Structures

1999 ◽  
Vol 4 (S1) ◽  
pp. 405-410
Author(s):  
H. Hirayama ◽  
Y. Aoyagi
Keyword(s):  
Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Quantum Well Structures ◽  
Si Doping ◽  
Active Layers ◽  
Metal Organic ◽  
Si Doped ◽  
Pl Emission ◽  
Multi Quantum Well

We demonstrate strong ultraviolet (UV) (280-330nm) photoluminescence (PL) emission from multi-quantum-well (MQW) structures consisting of AlGaN active layers fabricated by metal-organic chemical-vapor-deposition (MOCVD). Si-doping is shown to be very effective in order to enhance the PL emission of AlGaN QWs. We found that the optimum values of well thickness and Si-doping concentration of AlxGa1−xN/AlyGa1−yN (x=0.24−0.53, y=0.11) MQW structure for efficient emission were approximately 3nm and 2×1019cm−3, respectively. In addition, the PL intensities of AlGaN, GaN and InGaN quantum well structures are compared. We have found that the PL emission at 77K from a Al0.53Ga0.47N/Al0.11Ga0.89N MQW is as strong as that of InGaN QWs.

Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition

1993 ◽  
Vol 22 (3) ◽  
pp. 303-308 ◽  
Author(s):  
D. A. Grützmacher ◽  
T. O. Sedgwick ◽  
A. Zaslavsky ◽  
A. R. Powell ◽  
R. A. Kiehl ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Quantum Well Structures ◽  
Pressure Chemical

1.95 μm Compressively Strained Ingaas/Ingaasp Quantum Well DFB Laser With Low Threshold

1997 ◽  
Vol 484 ◽  
Author(s):  
Jie Dong ◽  
Akinoi Ubukata ◽  
Koh Matsumoto
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Double Quantum ◽  
Maximum Output ◽  
Quantum Well Structures ◽  
Double Quantum Well ◽  
Different Temperatures ◽  
Dfb Laser ◽  
Strained Quantum Well

AbstractIn this study, we demonstrate the growth of highly compressively strained InGaAs/JnGaAsP quantum well structures with large well thiclmess by low pressure metalorganic chemical vapor deposition for extending the emission wavelength of lasers. By comparing the photolumineswnce characteristics of quantum wells grown at different temperatures, it is clarified that a relatively high quality quantum well layer emittig at 2.0 μ, can be obtained at a growth temperature of 650°C. 1.95-μm-wavelength InGaAs/InGaAsP highly compressively strained quantum well DFB laser for laser spectroscopy monitors was also fabricated. Double quantum-well DFB laser operating at 1.95 μm exhibits threshold currents as low as 6 mA and 6.2 mW maximum output powers. 2.04-μm-wavelength DFB laser is also described.

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