scholarly journals Characteristics of AlN/GaN nanowire Bragg mirror grown on (001) silicon by molecular beam epitaxy

2013 ◽  
Vol 103 (18) ◽  
pp. 181102 ◽  
Author(s):  
Junseok Heo ◽  
Zifan Zhou ◽  
Wei Guo ◽  
Boon S. Ooi ◽  
Pallab Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bragg Mirror ◽  
Gan Nanowire

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3355-3359 ◽  
Author(s):  
Wei Guo ◽  
Meng Zhang ◽  
Animesh Banerjee ◽  
Pallab Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Catalyst Free ◽  
Gan Nanowire

Wafer-Level Photocatalytic Water Splitting on GaN Nanowire Arrays Grown by Molecular Beam Epitaxy

Nano Letters ◽  
2011 ◽  
Vol 11 (6) ◽  
pp. 2353-2357 ◽  
Author(s):  
Defa Wang ◽  
Adrien Pierre ◽  
Md Golam Kibria ◽  
Kai Cui ◽  
Xueguang Han ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Water Splitting ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Wafer Level ◽  
Photocatalytic Water Splitting ◽  
Gan Nanowire

scholarly journals Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy

2020 ◽  
Vol 32 (8) ◽  
pp. 085705
Author(s):  
Omar Saket ◽  
Junkang Wang ◽  
Nuño Amador-Mendez ◽  
Martina Morassi ◽  
Arup Kunti ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gan Nanowire

scholarly journals The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy

2014 ◽  
Author(s):  
Tien Khee Ng ◽  
Anwar Gasim ◽  
Dongkyu Cha ◽  
Bilal Janjua ◽  
Yang Yang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Plasma Source ◽  
Gan Nanowire

High reflectivity 1.55 μm (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy

1994 ◽  
Vol 64 (6) ◽  
pp. 690-691 ◽  
Author(s):  
B. Lambert ◽  
Y. Toudic ◽  
Y. Rouillard ◽  
M. Baudet ◽  
B. Guenais ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bragg Mirror ◽  
High Reflectivity

Electroluminescence from Single 3D GaN Nanowire Grown by Self-Catalytic Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Chito E. Kendrick ◽  
R. Tilley ◽  
M. Kobayashi ◽  
R. J. Reeves ◽  
S. M. Durbin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Yellow Luminescence ◽  
Sem Images ◽  
Tem Analysis ◽  
Gan Nanowires ◽  
Strong Luminescence ◽  
Kink Site ◽  
Gan Nanowire ◽  
Free Growth

ABSTRACT3-D branching GaN nanowires have been grown using the intermediate and Ga-rich growth regimes of plasma assisted molecular beam epitaxy. Evidence that the growth is due to an auto-catalytic VLS process is obtained through SEM images showing droplet termination heads, the composition of which is essentially pure Ga. TEM analysis revealed a defect free crystal structure, even in the trunk to branch junction. Cathodoluminescence from the trunk of the branching nanowires produced a strong luminescence feature at 3.44 eV, while a slight decrease in energy to 3.1 eV was observed at the interface between the nanowire and epilayer or kink site. No yellow luminescence was detected, further suggesting a defect free growth. Preliminary I-V measurements give mixed results, suggesting intrinsic n-type nanowires.

Molecular beam epitaxy growth of 1.3 [micro sign]m high-reflectivity AlGaAsSb/AlAsSb Bragg mirror

1997 ◽  
Vol 33 (14) ◽  
pp. 1227 ◽  
Author(s):  
G. Almuneau ◽  
F. Genty ◽  
L. Chusseau ◽  
N. Bertru ◽  
B. Fraisse ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Bragg Mirror ◽  
High Reflectivity

scholarly journals Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

2011 ◽  
Vol 109 (1) ◽  
pp. 014309 ◽  
Author(s):  
F. Limbach ◽  
T. Gotschke ◽  
T. Stoica ◽  
R. Calarco ◽  
E. Sutter ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural And Optical Properties ◽  
Nanowire Heterostructures ◽  
Gan Nanowire
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