Scaling performance of Ga2O3/GaN nanowire field effect transistor

2013 ◽  
Vol 114 (16) ◽  
pp. 163706 ◽  
Author(s):  
Chi-Kang Li ◽  
Po-Chun Yeh ◽  
Jeng-Wei Yu ◽  
Lung-Han Peng ◽  
Yuh-Renn Wu
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gan Nanowire ◽  
Effect Transistor

Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor

2016 ◽  
Vol 16 (5) ◽  
pp. 5049-5052 ◽  
Author(s):  
Dong-Gi Lee ◽  
V Sindhuri ◽  
Young-Woo Jo ◽  
Dong-Hyeok Son ◽  
Hee-Sung Kang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gan Nanowire ◽  
Effect Transistor

High-yield GaN nanowire synthesis and field-effect transistor fabrication

2006 ◽  
Vol 35 (4) ◽  
pp. 670-674 ◽  
Author(s):  
Huaqiang Wu ◽  
Ho-Young Cha ◽  
M. Chandrashekhar ◽  
Michael G. Spencer ◽  
Goutam Koley
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
High Yield ◽  
Gan Nanowire ◽  
Effect Transistor ◽  
Nanowire Synthesis ◽  
Transistor Fabrication

Ultrasensitive in Situ Label-Free DNA Detection Using a GaN Nanowire-Based Extended-Gate Field-Effect-Transistor Sensor

2011 ◽  
Vol 83 (6) ◽  
pp. 1938-1943 ◽  
Author(s):  
Chin-Pei Chen ◽  
Abhijit Ganguly ◽  
Ching-Ying Lu ◽  
Ting-Yu Chen ◽  
Chun-Chiang Kuo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Dna Detection ◽  
Label Free ◽  
Free Dna ◽  
Gan Nanowire ◽  
Effect Transistor

A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control

2016 ◽  
Vol 108 (3) ◽  
pp. 033101 ◽  
Author(s):  
Ž. Gačević ◽  
D. López-Romero ◽  
T. Juan Mangas ◽  
E. Calleja
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Gan Nanowire ◽  
Effect Transistor ◽  
Electrostatic Control

Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)

2006 ◽  
Vol 527-529 ◽  
pp. 1549-1552 ◽  
Author(s):  
Sang Kwon Lee ◽  
Han Kyu Seong ◽  
Ki Chul Choi ◽  
Nam Kyu Cho ◽  
Heon Jin Choi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Semiconductor Nanowires ◽  
Electrical Devices ◽  
Gan Nanowire ◽  
Effect Transistor

We report on simple techniques for extracting the electrical properties of 1-dimensional semiconductor nanowires using standard ultraviolet (UV) photo-lithography instead of e-beam lithography (EBL), which is a commonly used technique for the fabrication of nanoscale electrical devices. For electrical transport measurement the gallium nitride nanowires (GaN NWs) were prepared by a horizontal hot-wall chemical vapor deposition (CVD) with metallic Ga and NH3 gas for Ga and N sources, and GaN nanowire field effect transistor (FET) structures on a 8×8 mm2 silicon wafer were fabricated by ordinary 2-mask photo-lithography processes. The estimated carrier mobility from the gate-modulation characteristics is on the order of 60 ∼ 70 cm2/V⋅s. We found that our approach is a powerful and simple technique to extract the electrical properties of semiconductor nanowires. The material characteristics of GaN nanowires are also discussed.

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