Impact of ammonia on the electrical properties of p-type Si nanowire arrays

2013 ◽  
Vol 114 (17) ◽  
pp. 173702 ◽  
Author(s):  
Chuanbo Li ◽  
Chunqian Zhang ◽  
Kristel Fobelets ◽  
Jun Zheng ◽  
Chunlai Xue ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
P Type

Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Electrical Properties ◽  
Chemical Modification ◽  
Nanowire Array ◽  
Noise Measurement ◽  
Nanowire Arrays ◽  
Interface Traps ◽  
Si Nanowire ◽  
Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

High-performance hydrogen sensing properties and sensing mechanism in Pd-coated p-type Si nanowire arrays

2018 ◽  
Vol 256 ◽  
pp. 465-471 ◽  
Author(s):  
Jisun Baek ◽  
Byungjin Jang ◽  
Min Hyung Kim ◽  
Wonkung Kim ◽  
Jeongmin Kim ◽  
...  
Keyword(s):  
High Performance ◽  
Nanowire Arrays ◽  
Sensing Properties ◽  
Si Nanowire ◽  
Sensing Mechanism ◽  
Hydrogen Sensing ◽  
P Type

Large-Area Ordered P-type Si Nanowire Arrays as Photocathode for Highly Efficient Photoelectrochemical Hydrogen Generation

2014 ◽  
Vol 6 (15) ◽  
pp. 12111-12118 ◽  
Author(s):  
Shufan Huang ◽  
Haifeng Zhang ◽  
Zilong Wu ◽  
Dezi Kong ◽  
Dongdong Lin ◽  
...  
Keyword(s):  
Hydrogen Generation ◽  
Nanowire Arrays ◽  
Large Area ◽  
Si Nanowire ◽  
Highly Efficient ◽  
P Type

Study of Two-Step Electroless Etched Si Nanowire Arrays

2011 ◽  
Vol 110-116 ◽  
pp. 3284-3288 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Properties ◽  
Chemical Etching ◽  
Nanowire Arrays ◽  
Nucleation Process ◽  
Si Nanowires ◽  
Two Stage ◽  
Si Nanowire ◽  
Ag Particles

The influence of the nucleation process of Ag particles on the formation of Si nanowire arrays is investigated by two-stage electroless chemical etching. The dimensions of the Ag particles formed in the first stage of the process play an important role in the formation of the Si nanowires. The nucleation and etch result are analysed using SEM. The electrical properties of the resulting Si NW arrays are also studied.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Study of the electrical properties of  Cz p-type solar-grade silicon wafers against the high-temperature processes

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Mohamed Maoudj ◽  
Djoudi Bouhafs ◽  
Nacer Eddine Bourouba ◽  
Abdelhak Hamida-Ferhat ◽  
Abdelkader El Amrani
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Silicon Wafers ◽  
Solar Grade Silicon ◽  
High Temperature Processes ◽  
Grade Silicon ◽  
P Type

Tunable optical and electrical properties of p-type Cu2O thin films

2021 ◽  
Author(s):  
Daniel A. Fentahun ◽  
Alekha Tyagi ◽  
Sugandha Singh ◽  
Prerna Sinha ◽  
Amodini Mishra ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Cu2o Thin Films ◽  
P Type
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