Growth rate measurements of lysozyme crystals under microgravity conditions by laser interferometry

2013 ◽  
Vol 84 (10) ◽  
pp. 103707 ◽  
Author(s):  
Izumi Yoshizaki ◽  
Katsuo Tsukamoto ◽  
Tomoya Yamazaki ◽  
Kenta Murayama ◽  
Kentaro Oshi ◽  
...  
2015 ◽  
Vol 15 (10) ◽  
pp. 4787-4794 ◽  
Author(s):  
Yoshihisa Suzuki ◽  
Katsuo Tsukamoto ◽  
Izumi Yoshizaki ◽  
Hitoshi Miura ◽  
Takahisa Fujiwara

2011 ◽  
Vol 115 (27) ◽  
pp. 8739-8745 ◽  
Author(s):  
Etsuro Yokoyama ◽  
Izumi Yoshizaki ◽  
Taro Shimaoka ◽  
Takehiko Sone ◽  
Tatsuo Kiyota ◽  
...  

1998 ◽  
Vol 13 (7) ◽  
pp. 1812-1815 ◽  
Author(s):  
R. Yakimova ◽  
M. Syväjärvi ◽  
C. Lockowandt ◽  
M. K. Linnarsson ◽  
H. H. Radamson ◽  
...  

6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Sc solvent at 1750 °C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements.


1999 ◽  
Vol 55 (5) ◽  
pp. 1005-1011 ◽  
Author(s):  
Elizabeth L. Forsythe ◽  
Arunan Nadarajah ◽  
Marc L. Pusey

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 400 ◽  
Author(s):  
Yong Yu ◽  
Kai Li ◽  
Hai Lin ◽  
Ji-Cheng Li

Space is expected to be a convection-free, quiescent environment for the production of large-size and high-quality protein crystals. However, the mechanisms by which the diffusion environment in space improves the quality of the protein crystals are not fully understood. The interior of a microfluidic device can be used to simulate a microgravity environment to investigate the protein crystallization mechanism that occurs in space. In the present study, lysozyme crystals were grown in a prototype microchannel device with a height of 50 μm in a glass-polydimethylsiloxane (PDMS)-glass sandwich structure. Comparative experiments were also conducted in a sample pool with a height of 2 mm under the same growth conditions. We compared the crystal morphologies and growth rates of the grown crystals in the two sample pools. The experimental results showed that at very low initial supersaturation, the morphology and growth rates of lysozyme crystals under the simulated microgravity conditions is similar to that on Earth. With increasing initial supersaturation, a convection-free, quiescent environment is better for lysozyme crystal growth. When the initial supersaturation exceeded a threshold, the growth of the lysozyme crystal surface under the simulated microgravity conditions never completely transform from isotropic to anisotropic. The experimental results showed that the convection may have a dual effect on the crystal morphology. Convection can increase the roughness of the crystal surface and promote the transformation of the crystal form from circular to tetragonal during the crystallization process.


2015 ◽  
Vol 15 (5) ◽  
pp. 2137-2143 ◽  
Author(s):  
Yuki Hayashi ◽  
Mihoko Maruyama ◽  
Masashi Yoshimura ◽  
Shino Okada ◽  
Hiroshi Y. Yoshikawa ◽  
...  

1990 ◽  
Vol 204 ◽  
Author(s):  
Kwok-L. Ho ◽  
Klavs F. Jensen ◽  
Jen-W. Hwang ◽  
John F. Evans ◽  
Wayne L. Gladfelter

ABSTRACTGaN thin films have been deposited on Si and sapphire substrates by metalorganic chemical vapor deposition (MOCVD) using diethylgalliumazide and ammonia. Films were grown in the temperature range of 500-750°C. Growth rates were monitored in situ using laser interferometry. The addition of ammonia enhanced the growth rate significantly. At high temperatures, gas-phase depletion of the precursor reduced the growth rate of GaN. Films grown on (0001)-oriented sapphire substrates at temperatures above 650°C were highly textured with smooth surface morphology. Optical and electrical properties of the films are discussed and compared to those of films grown using conventional Ga and N sources.


1989 ◽  
Vol 162 ◽  
Author(s):  
Kwok-L. Ho ◽  
Klavs F. Jensen ◽  
Scott A. Hanson ◽  
John F. Evans ◽  
David C. Boyd ◽  
...  

ABSTRACTThin films of aluminum nitride have been grown by metalorganic chemical vapor deposition (MOCVD) from diethylaluminum azide. Growth rates of AIN on Si(111) were monitored in-situ with laser interferometry. The growth rate was linear in the partial pressure of the reactant at high temperatures and sublinear at low temperatures. A simple surface reaction mechanism consistent with these observations has been proposed. Surface reaction kinetics and mechanism were further investigated by steady-state kinetic mass spectrometry. Parameters in the growth rate expression were determined by a nonlinear regression of growth rate data. A typical sample of AIN on B-plane sapphire showed a bandgap of about 5.2eV which was increased to 5.9eV upon annealing in nitrogen at atmosphere pressure.


1999 ◽  
Vol 196 (2-4) ◽  
pp. 649-664 ◽  
Author(s):  
Fermı́n Otálora ◽  
M Luisa Novella ◽  
Deyanira Rondón ◽  
Juan-Manuel Garcı́a-Ruiz

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