scholarly journals Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

2013 ◽  
Vol 103 (18) ◽  
pp. 181904 ◽  
Author(s):  
Leizhi Sun ◽  
Richard Haight ◽  
Prasert Sinsermsuksakul ◽  
Sang Bok Kim ◽  
Helen H. Park ◽  
...  
2021 ◽  
Vol 112 ◽  
pp. 110666
Author(s):  
Shuaihui Sun ◽  
Jie Guo ◽  
Ruiting Hao ◽  
Abuduwayiti Aierken ◽  
Bin Liu ◽  
...  

2019 ◽  
Vol 127 (3) ◽  
pp. 37003
Author(s):  
Tianyu Shu ◽  
Hanlun Xu ◽  
Zeping Weng ◽  
Songsong Ma ◽  
Huizhen Wu

2004 ◽  
Vol 84 (16) ◽  
pp. 3175-3177 ◽  
Author(s):  
L. Weinhardt ◽  
C. Heske ◽  
E. Umbach ◽  
T. P. Niesen ◽  
S. Visbeck ◽  
...  

2005 ◽  
Vol 86 (6) ◽  
pp. 062109 ◽  
Author(s):  
L. Weinhardt ◽  
O. Fuchs ◽  
D. Groß ◽  
G. Storch ◽  
E. Umbach ◽  
...  

2017 ◽  
Vol 9 (20) ◽  
pp. 17586-17594 ◽  
Author(s):  
Wei-Hao Ho ◽  
Chia-Hao Hsu ◽  
Shih-Yuan Wei ◽  
Chung-Hao Cai ◽  
Wei-Chih Huang ◽  
...  

2003 ◽  
Vol 763 ◽  
Author(s):  
F. Säuberlich ◽  
A. Klein

AbstractTransparent conductive oxides (TCOs) are important contact materials in thin film solar cells. It is thus important to understand their basic interface properties as the band alignment. We present results on the determination of interfacial properties of TCOs using photoelectron spectroscopy. Large interface dipole potentials are generally observed at interfaces between conducting oxides ZnO, SnO2, In2O3and TiO2and chalcogenide semiconductors CdS, CdTe and Cu2S, leading to small conduction band discontinuities in the case of ZnO, SnO2and In2O3and to large conduction band discontinuities for TiO2. In addition to the band alignment the Fermi level position at the interface determines the contact properties of TCOs in thin film solar cells.


2003 ◽  
Vol 763 ◽  
Author(s):  
D. Kraft ◽  
B. Späth ◽  
A. Thißen ◽  
A. Klein ◽  
W. Jaegermann

AbstractFormation of low resistance back contacts in CdTe thin film solar cells has been a research issue for many years. Ohmic contacts to the absorber layer are typically prepared using the diffusion of dopant atoms from the back contact material into the CdTe forming a thin space charge layer that can be easily tunnelled. Stable CdTe solar cells with reasonable back contact characteristics have been prepared using metal/Sb2Te3 layer sequences. In this study the chemical and electronic properties of such layer systems have been investigated using photoelectron spectroscopy. The vacuum deposited Sb2Te3 layers do not react with the CdTe substrate. Band alignment does not indicate the formation of a good back contact. By subsequent deposition of metals a chemical reaction is induced forming metal-tellurides, a metal/Sb-alloy and elemental Sb. Although an Sb diffusion into the CdTe absorber is observed, no increase of p-doping in the surface region is evident.


2003 ◽  
Vol 431-432 ◽  
pp. 477-482 ◽  
Author(s):  
Guangming Liu ◽  
T. Schulmeyer ◽  
J. Brötz ◽  
A. Klein ◽  
W. Jaegermann

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