Band alignment at the CdS∕Cu(In,Ga)S2 interface in thin-film solar cells

2005 ◽  
Vol 86 (6) ◽  
pp. 062109 ◽  
Author(s):  
L. Weinhardt ◽  
O. Fuchs ◽  
D. Groß ◽  
G. Storch ◽  
E. Umbach ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Alignment ◽  
Thin Film Solar Cells

Influence of Cd0.6Zn0.4S buffer layer on the band alignment and the performance of CZTS thin film solar cells

2021 ◽  
Vol 112 ◽  
pp. 110666
Author(s):  
Shuaihui Sun ◽  
Jie Guo ◽  
Ruiting Hao ◽  
Abuduwayiti Aierken ◽  
Bin Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Czts Thin Film

scholarly journals Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

2013 ◽  
Vol 103 (18) ◽  
pp. 181904 ◽  
Author(s):  
Leizhi Sun ◽  
Richard Haight ◽  
Prasert Sinsermsuksakul ◽  
Sang Bok Kim ◽  
Helen H. Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Alignment ◽  
Thin Film Solar Cells

Determination of band alignment at the CdTe/SnTe heterojunction interface for CdTe thin-film solar cells

2019 ◽  
Vol 127 (3) ◽  
pp. 37003
Author(s):  
Tianyu Shu ◽  
Hanlun Xu ◽  
Zeping Weng ◽  
Songsong Ma ◽  
Huizhen Wu
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film

Band alignment at the i-ZnO/CdS interface in Cu(In,Ga)(S,Se)2 thin-film solar cells

2004 ◽  
Vol 84 (16) ◽  
pp. 3175-3177 ◽  
Author(s):  
L. Weinhardt ◽  
C. Heske ◽  
E. Umbach ◽  
T. P. Niesen ◽  
S. Visbeck ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Alignment ◽  
Thin Film Solar Cells

Sputtered Inx(O,S)y Buffer Layers for Cu(In,Ga)Se2 Thin-Film Solar Cells: Engineering of Band Alignment and Interface Properties

2017 ◽  
Vol 9 (20) ◽  
pp. 17586-17594 ◽  
Author(s):  
Wei-Hao Ho ◽  
Chia-Hao Hsu ◽  
Shih-Yuan Wei ◽  
Chung-Hao Cai ◽  
Wei-Chih Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Alignment ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Interface Properties

Band Alignment at Oxide Semiconductor Interfaces

2003 ◽  
Vol 763 ◽  
Author(s):  
F. Säuberlich ◽  
A. Klein
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Oxide Semiconductor ◽  
Conducting Oxides ◽  
Interface Dipole ◽  
Semiconductor Interfaces

AbstractTransparent conductive oxides (TCOs) are important contact materials in thin film solar cells. It is thus important to understand their basic interface properties as the band alignment. We present results on the determination of interfacial properties of TCOs using photoelectron spectroscopy. Large interface dipole potentials are generally observed at interfaces between conducting oxides ZnO, SnO2, In2O3and TiO2and chalcogenide semiconductors CdS, CdTe and Cu2S, leading to small conduction band discontinuities in the case of ZnO, SnO2and In2O3and to large conduction band discontinuities for TiO2. In addition to the band alignment the Fermi level position at the interface determines the contact properties of TCOs in thin film solar cells.

Chemical and Electronic Properties of Metal/Sb2Te3/CdTe Contacts for CdTe Thin Film Solar Cells Studied by Photoelectron Spectroscopy

2003 ◽  
Vol 763 ◽  
Author(s):  
D. Kraft ◽  
B. Späth ◽  
A. Thißen ◽  
A. Klein ◽  
W. Jaegermann
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Surface Region ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Back Contact ◽  
Cdte Thin Film

AbstractFormation of low resistance back contacts in CdTe thin film solar cells has been a research issue for many years. Ohmic contacts to the absorber layer are typically prepared using the diffusion of dopant atoms from the back contact material into the CdTe forming a thin space charge layer that can be easily tunnelled. Stable CdTe solar cells with reasonable back contact characteristics have been prepared using metal/Sb2Te3 layer sequences. In this study the chemical and electronic properties of such layer systems have been investigated using photoelectron spectroscopy. The vacuum deposited Sb2Te3 layers do not react with the CdTe substrate. Band alignment does not indicate the formation of a good back contact. By subsequent deposition of metals a chemical reaction is induced forming metal-tellurides, a metal/Sb-alloy and elemental Sb. Although an Sb diffusion into the CdTe absorber is observed, no increase of p-doping in the surface region is evident.

Interface properties and band alignment of Cu2S/CdS thin film solar cells

2003 ◽  
Vol 431-432 ◽  
pp. 477-482 ◽  
Author(s):  
Guangming Liu ◽  
T. Schulmeyer ◽  
J. Brötz ◽  
A. Klein ◽  
W. Jaegermann
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Alignment ◽  
Thin Film Solar Cells ◽  
Interface Properties ◽  
Cds Thin Film
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