Chirality determination of ferromagnetic disk by local Hall effect

2013 ◽  
Vol 103 (12) ◽  
pp. 122408 ◽  
Author(s):  
Ahmet Serdar Demiray ◽  
Makoto Kohda ◽  
Junsaku Nitta
Keyword(s):  
Hall Effect ◽  
Ferromagnetic Disk

Determination of the Germanium Acceptor Ionisation Energy of ALGai-^As (0 ^ * ^ 0.40) by Hall Effect and Luminescence

1989 ◽  
pp. 257-267
Author(s):  
G. Oelgart ◽  
B Lippold ◽  
R . Heilmann ◽  
H . Neumann ◽  
B . Jacobs
Keyword(s):  
Hall Effect ◽  
Ionisation Energy

scholarly journals Determination of the resistivity anisotropy ofSrRuO3by measuring the planar Hall effect

2007 ◽  
Vol 75 (12) ◽  
Author(s):  
Isaschar Genish ◽  
Lior Klein ◽  
James W. Reiner ◽  
M. R. Beasley
Keyword(s):  
Hall Effect ◽  
Planar Hall Effect ◽  
Resistivity Anisotropy

Far-infrared magnetooptical generalized ellipsometry determination of free-carrier parameters in semiconductor thin film structures

2002 ◽  
Vol 744 ◽  
Author(s):  
Tino Hofmann ◽  
Marius Grundmann ◽  
Craig M. Herzinger ◽  
Mathias Schubert ◽  
Wolfgang Grill
Keyword(s):  
Hall Effect ◽  
Dielectric Function ◽  
Far Infrared ◽  
Free Carrier ◽  
Independent Experiment ◽  
Electron Mass ◽  
Effective Electron Mass ◽  
Effective Electron ◽  
Infrared Wavelengths

ABSTRACTIn accord with the Drude model, the free-carrier contribution to the dielectric function at infrared wavelengths is proportional to the ratio of the free-carrier concentration N and the effective mass m*, and the product of the optical mobility μ and m*. Typical infrared optical experiments are therefore sensitive to the free-carrier mass, but determination of m* from the measured dielectric function requires an independent experiment, such as an electrical Hall-effect measurement, which provides either N or μ. Highly-doped zincblende III-V-semiconductors exposed to a strong external magnetic field exhibit non-symmetric magnetooptical birefringence, which is inversely proportional to m*. If the spectral dependence of the magnetooptical dielectric function tensor is known, the parameters N, m* and μ can be determined independently from optical measurements alone. Generalized ellipsometry measures three complex-valued ratios of normalized Jones matrix elements, from which the individual tensor elements of the dielectric function of arbitrarily anisotropic materials in layered samples can be reconstructed. We present the application of generalized ellipsometry to semiconductor layer structures at far-infrared wavelengths, and determine the magnetooptical dielectric function for n-GaAs and n-AlGaInP for wavelengths from 100 μm to 15 μm. We obtain the effective electron mass and mobility results of GaAs in excellent agreement with results obtained from Hall-effect and Shubnikov-de-Haas experiments. The effective electron mass in disordered n-AlGaInP obtained here is in very good agreement with previous k·p calculations. (Far)-infrared magnetooptic generalized ellipsometry may open up new avenues for non-destructive characterization of free-carrier properties in complex semiconductor heterostructures.

Hall‐effect determination of the N‐trap bound state in GaAs1−xPx

1977 ◽  
Vol 31 (10) ◽  
pp. 685-687 ◽  
Author(s):  
L. J. van Ruyven ◽  
H. J. A. Bluyssen ◽  
R. W. van der Heijden ◽  
T. B. Tan ◽  
H. I. Ralph
Keyword(s):  
Hall Effect ◽  
Bound State

Electrical determination of spin mixing conductance at metal/insulator interface using inverse spin Hall effect

2012 ◽  
Vol 111 (7) ◽  
pp. 07C307 ◽  
Author(s):  
R. Takahashi ◽  
R. Iguchi ◽  
K. Ando ◽  
H. Nakayama ◽  
T. Yoshino ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Metal Insulator ◽  
Insulator Interface ◽  
Inverse Spin Hall Effect

Determination of the Germanium Acceptor Ionisation Energy of ALGai-.As (0 ^ x ^ 0.40) by Hall Effect and Luminescence

1989 ◽  
pp. 257-267
Author(s):  
G. Oelgakt ◽  
B. Lippold ◽  
R . Heilmann ◽  
H Neumann ◽  
B . Jacobs
Keyword(s):  
Hall Effect ◽  
Ionisation Energy
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